Guoliang Ma, Yanqing Zhang, Heyi Li, Chaoming Liu, Chunhua Qi, Yidan Wei, Tianqi Wang, S. Dong, Mingxue Huo
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引用次数: 1
Abstract
The conductivity recombination mechanism of different ions irradiation was investigated in n-type 4H-SiC Schottky diode. The incident ions were selected as 1 MeV electrons, 25 MeV C and 40 MeV Si ions, respectively. The primaiy knocked-on atoms (PKAs) distribution in the irradiated 4H-SiC is calculated by SRIM code. After irradiation, the carrier concentration changed significantly. Compared with virous particles irradiation, it is indicated that the carrier removal rates under these three irradiation conditions are greatly different. Based on the theoretical analysis, different conductivity compensation brought by different defect status is the major reason for the significant difference in carrier removal rate.
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