{"title":"Perspectives of the VGF growth process for the preparation of low-defect InP substrate crystals","authors":"G. Muller, D. Hofmann, N. Schafer","doi":"10.1109/ICIPRM.1993.380710","DOIUrl":null,"url":null,"abstract":"The current status of LEC (liquid encapsulated Czochralski)-type growth processes and vertical gradient freeze (VGF)-growth of InP substrate crystals is reviewed. The twinning problem presently limiting the VGF potential is discussed and strategies to overcome this defect are considered. A new type of VGF multizone furnace is introduced. VGF processing under defined thermal and constitutional boundary conditions in this apparatus based on a recently developed global numerical model offers new perspectives for the growth of low-defect InP single crystals.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"12 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380710","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The current status of LEC (liquid encapsulated Czochralski)-type growth processes and vertical gradient freeze (VGF)-growth of InP substrate crystals is reviewed. The twinning problem presently limiting the VGF potential is discussed and strategies to overcome this defect are considered. A new type of VGF multizone furnace is introduced. VGF processing under defined thermal and constitutional boundary conditions in this apparatus based on a recently developed global numerical model offers new perspectives for the growth of low-defect InP single crystals.<>
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