H. Jung, T. Park, Jeong Hwan Kim, Sang Young Lee, Joohwi Lee, Himchan Oh, Kwang Duck Na, Jung-min Park, Weon-hong Kim, Min-woo Song, N. Lee, C. Hwang
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引用次数: 6
Abstract
HfO2, HfZrxOy and ZrO2 gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO2, ZrO2 exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO2 content increases, Vth shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies.
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