{"title":"200mm GaN-on-Si epitaxy and e-mode device technology","authors":"D. Marcon, Y. Saripalli, S. Decoutere","doi":"10.1109/IEDM.2015.7409709","DOIUrl":null,"url":null,"abstract":"In this work, three types of high-voltage buffer architectures for GaN-on-200mm-Si epitaxy are compared and discussed. Two device architectures, recessed gate MISHEMTs and p-GaN HEMTs technology, to obtain e-mode operation developed on these buffers are also discussed. Threshold voltage/output current tuning, threshold voltage stability and possible issues are highlighted. A possible device architecture that combines the best of the two approaches is proposed together with preliminary test results.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"260 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"66","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409709","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 66
Abstract
In this work, three types of high-voltage buffer architectures for GaN-on-200mm-Si epitaxy are compared and discussed. Two device architectures, recessed gate MISHEMTs and p-GaN HEMTs technology, to obtain e-mode operation developed on these buffers are also discussed. Threshold voltage/output current tuning, threshold voltage stability and possible issues are highlighted. A possible device architecture that combines the best of the two approaches is proposed together with preliminary test results.
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