J.P. Liu, P. R. Verma, S. Chu, S.Q. Zhang, W. Loh, K. Leong, H.L. Siew, D. Sohn, L. Hsia, S. Decoutere, M. Xu, K. van Wichelen, R. Loo
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引用次数: 2
Abstract
We show that the incorporation of interstitial C impacts the base current ideality in SiGe:C HBTs fabricated in 0.18mum SiGe BiCMOS process. SiGe:C epi layers with the same structural and processing parameters but with less interstitial C obtained by adjusting growth conditions have better base current ideality. It is observed that the interstitial C in the emitter/base depletion region, rather than that in the neutral base region, leads to the base current non-ideality. Optimization of C substitution and profile leads to less recombination as well as good B diffusion control thus good device performance
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