{"title":"MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low threshold 1.3 /spl mu/m lasers","authors":"M. Yamamoto, N. Yamamoto, J. Nakano","doi":"10.1109/ICIPRM.1993.380668","DOIUrl":null,"url":null,"abstract":"The authors report strained InAsP quantum-well structures emitting at 1.3 /spl mu/m that were grown by low-pressure metalorganic vapor phase epitaxy. Threshold current densities as low as 88 A/cm/sup 2/ were achieved with a graded-index separate-confinement-heterostructure single-quantum-well 40-/spl mu/m wide ridge stripe waveguide laser diode. This superior laser performance clearly demonstrates the high material quality of strained InAsP/InGaAsP quantum well structures for long wavelength optical device applications.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"194 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
The authors report strained InAsP quantum-well structures emitting at 1.3 /spl mu/m that were grown by low-pressure metalorganic vapor phase epitaxy. Threshold current densities as low as 88 A/cm/sup 2/ were achieved with a graded-index separate-confinement-heterostructure single-quantum-well 40-/spl mu/m wide ridge stripe waveguide laser diode. This superior laser performance clearly demonstrates the high material quality of strained InAsP/InGaAsP quantum well structures for long wavelength optical device applications.<>
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