Weifeng Zhao, Niu Jin, Guang Chen, Liang Wang, I. Adesida
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Abstract
This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Ag-ohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 mum demonstrated excellent DC and RF characteristics
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