Influence of probing configuration and data set size for bipolar junction capacitance determination

D. MacSweeney, K. McCarthy, L. Floyd, A. Mathewson, P. Hurley, J. A. Power, S. C. Kelly
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引用次数: 1

Abstract

In this paper, the on-wafer measurement of junction depletion capacitance is examined. This work provides an in-depth discussion of possible probing configurations which can be used. It outlines a method to consistently measure the junction capacitances accurately. The results from this method compare favourably with those extracted using S-parameter measurements. Additionally a method is formulated to determine the minimum number of data points required to maintain extraction accuracy.
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探测结构和数据集大小对双极结电容测定的影响
本文研究了在晶片上测量结耗尽电容的方法。这项工作提供了可以使用的可能探测配置的深入讨论。概述了一种连续准确测量结电容的方法。该方法的结果与使用s参数测量提取的结果比较有利。另外,还制定了一种方法来确定维持提取精度所需的最小数据点数。
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