N. Mathur, Y. Ahn, I. Kouznetov, F. Jenne, J. Fulford
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引用次数: 5
Abstract
A study on the programming yield of one time programmable (OTP) device based on anti-fuse gate oxide breakdown on p-type and n-type substrates is presented. Charge injection into anti-fuse gate oxide from the substrate during OTP programming can alter device characteristics, which impact the OTP programming yield. Experiments showed higher programming yield with increasing anti-fuse gate read current can be obtained with the OTP device based on anti-fuse gate oxide breakdown on n-type substrate compared to p-type substrate due to less electron-hole pair generation.
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