NMR characterization of stoichiometry-related point defects in SI-GaAs

Abstract

Nuclear magnetic resonance (NMR) has now become a powerful tool in investigating point defects in semiconductor crystals. By being combined with conventional characterization methods for known defects, it presents knowledge on the concentrations of unknown donors or acceptors. The method has been applied to the studies of intrinsic point defects in undoped, semi-insulating GaAs, where the behavior of intrinsic point defects (a)during the ingot annealing and (b)by the variation in the melt stoichiometry are investigated.