{"title":"Comprehensive assessment of RRAM-based PUF for hardware security applications","authors":"An Chen","doi":"10.1109/IEDM.2015.7409672","DOIUrl":null,"url":null,"abstract":"The stochastic behavior and intrinsic variability of resistive random access memory (RRAM) can be utilized to implement physical unclonable function (PUF) for hardware security applications. Performance of RRAM PUF depends on RRAM device characteristics. Reliability of RRAM PUF may degrade with retention loss, read instability and thermal variation, while PUF uniqueness is maintained as long as the randomness in RRAM resistance distribution is preserved. Based on key PUF metrics, this paper presents a systematic approach for a comprehensive evaluation of this novel application of RRAM.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"64","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 64
Abstract
The stochastic behavior and intrinsic variability of resistive random access memory (RRAM) can be utilized to implement physical unclonable function (PUF) for hardware security applications. Performance of RRAM PUF depends on RRAM device characteristics. Reliability of RRAM PUF may degrade with retention loss, read instability and thermal variation, while PUF uniqueness is maintained as long as the randomness in RRAM resistance distribution is preserved. Based on key PUF metrics, this paper presents a systematic approach for a comprehensive evaluation of this novel application of RRAM.
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