Jinfeng Kang, B. Gao, Peng Huang, Haitong Li, Yudi Zhao, Zheng Chen, Changze Liu, L. Liu, X. Liu
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引用次数: 21
Abstract
New physical insights on the underlying physics from switching behaviors to operating mechanisms of oxide-based RRAM are presented by taking the microstructure nature of switching materials and correlated physical effects with switching process into account. Based on the new physical insights, a platform for HfOx- and TaOx-based RRAM including simulation tools and compact models is developed, which is able to reproduce the essential electrical and microscopic characteristics of RRAM and bridge the link between device and circuit systems, meeting the requirements of device-circuit-system co-design and optimization.
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