Uniformity Improvement of Ti/ZrO2/Pt RRAM by Analyzing and Reducing Current Overshoot

IF 4.3 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-06-12 DOI:10.1021/acsaelm.4c00790

Dingming Yang, Jiahao Xue, Jing Wang, Hao Wang, Shulong Wang, Xiaoyi Lei*, Junfeng Yan and Wu Zhao,

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Abstract

Current overshoot in resistive random access memory (RRAM) can affect the stability and increase the power consumption of devices, which has become a great challenge in RRAM applications. In this study, we analyzed current overshoot in Ti/ZrO₂/Pt devices and proposed a solution to improve device stability through high-temperature forming. The analysis results indicate that current overshoot is likely to occur in the RESET process when the SET voltage is too high, and temperature has an important impact on the conversion voltage of the Ti/ZrO₂/Pt devices. Moreover, we established an electrothermal coupling model of the devices based on the oxygen vacancy conduction mechanism by COMSOL, which could obtain the distribution of the oxygen vacancy concentration in the dielectric layer during resistance conversion at different temperatures and electric fields. Based on the above analysis, by forming at high temperature, the overshoot current is reduced, and the stability of the switching voltage is improved successfully.

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通过分析和降低电流过冲改善 Ti/ZrO2/Pt RRAM 的均匀性

电阻式随机存取存储器（RRAM）中的电流过冲会影响器件的稳定性并增加功耗，这已成为 RRAM 应用中的一大挑战。在这项研究中，我们分析了 Ti/ZrO2/Pt 器件中的电流过冲，并提出了通过高温成型提高器件稳定性的解决方案。分析结果表明，当 SET 电压过高时，在 RESET 过程中容易出现电流过冲，而温度对 Ti/ZrO2/Pt 器件的转换电压有重要影响。此外，我们还利用 COMSOL 建立了基于氧空位传导机理的器件电热耦合模型，可以得到不同温度和电场下电阻转换过程中介质层中氧空位浓度的分布情况。根据上述分析，通过在高温下形成，过冲电流减小了，开关电压的稳定性也成功提高了。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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