{"title":"The Study of Electrical Conductivity and Dielectric Relaxation in the Organic Ferroelectric Diisopropylammonium Iodide (dipaI)","authors":"Mamataj Khatun, Ekramul Kabir","doi":"10.1007/s10854-024-13845-1","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, we delve into the dielectric response and electrical conductivity behavior of the innovative organic ferroelectric Diisopropylammonium Iodide (dipaI), with a focus on power dispersion and the universal relaxation law. We employ impedance spectroscopy, dielectric relaxation, and AC conductivity analyses across a broad spectrum of temperatures (343 K to 443 K) and frequencies (1 kHz to 20 MHz). Using the Maxwell–Wagner capacitor model, we elucidate the complex impedance using an equivalent circuit. In the equivalent circuit, elements like resistors and capacitors are arranged in a series and parallel configuration to represent the dielectric and conductive characteristics of the material. By analyzing the impedance spectrum using this model, we distinguish between the contributions from grain interiors and grain boundaries. The investigation of dielectric relaxation involves the importance of the Havriliak-Negami (HN) formula to interpret experimental findings. Unlike simpler models like the Debye relaxation, which assumes a single, discrete relaxation time, the HN formula accounts for a distribution of relaxation times, providing a more nuanced description of how polarization evolves over time. Additionally, the universal power law utilizes the parameter 'n' to describe the behavior of the electrical conductivity on the frequency, which is predicated on the hopping of charge carriers over potential barriers.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 32","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13845-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we delve into the dielectric response and electrical conductivity behavior of the innovative organic ferroelectric Diisopropylammonium Iodide (dipaI), with a focus on power dispersion and the universal relaxation law. We employ impedance spectroscopy, dielectric relaxation, and AC conductivity analyses across a broad spectrum of temperatures (343 K to 443 K) and frequencies (1 kHz to 20 MHz). Using the Maxwell–Wagner capacitor model, we elucidate the complex impedance using an equivalent circuit. In the equivalent circuit, elements like resistors and capacitors are arranged in a series and parallel configuration to represent the dielectric and conductive characteristics of the material. By analyzing the impedance spectrum using this model, we distinguish between the contributions from grain interiors and grain boundaries. The investigation of dielectric relaxation involves the importance of the Havriliak-Negami (HN) formula to interpret experimental findings. Unlike simpler models like the Debye relaxation, which assumes a single, discrete relaxation time, the HN formula accounts for a distribution of relaxation times, providing a more nuanced description of how polarization evolves over time. Additionally, the universal power law utilizes the parameter 'n' to describe the behavior of the electrical conductivity on the frequency, which is predicated on the hopping of charge carriers over potential barriers.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.