Exploring magneto-optical anisotropy on Tb3Al3Ga2O12 single crystal for visible-infrared Faraday isolators

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-20 DOI:10.1007/s10854-024-14093-z
Zhen Zhang, Xianhui Xin, Yuankai Hao, Xianxian Yang, Zhitai Jia, Xutang Tao, Xiuwei Fu
{"title":"Exploring magneto-optical anisotropy on Tb3Al3Ga2O12 single crystal for visible-infrared Faraday isolators","authors":"Zhen Zhang,&nbsp;Xianhui Xin,&nbsp;Yuankai Hao,&nbsp;Xianxian Yang,&nbsp;Zhitai Jia,&nbsp;Xutang Tao,&nbsp;Xiuwei Fu","doi":"10.1007/s10854-024-14093-z","DOIUrl":null,"url":null,"abstract":"<div><p>Tb<sub>3</sub>Al<sub>3</sub>Ga<sub>2</sub>O<sub>12</sub> (TAGG) crystal possesses excellent optical and magneto-optical properties and is considered a promising crystal for Faraday isolators. In this work, we report the magneto-optical anisotropy of the TAGG crystal for the first time, which is crucial for the actual processing and usage of the crystal devices. Herein, a high-quality non-cracked TAGG single crystal is grown by the Czochralski method, and it exhibits a high transmittance of more than 80% in the wavelength range of 400–1600 nm. The magneto-optical anisotropy is determined by studying the magneto-optical properties along three different crystal orientations (100), (110), and (111). The results demonstrate that the (111) orientation exhibits superior magneto-optical performance with the largest Verdet constants of 279.4 rad T<sup>−1</sup> m<sup>−1</sup> at 515 nm, 154.2 rad T<sup>−1</sup> m<sup>−1</sup> at 650 nm, and 49.5 rad T<sup>−1</sup> m<sup>−1</sup> at 1064 nm, respectively.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14093-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Tb3Al3Ga2O12 (TAGG) crystal possesses excellent optical and magneto-optical properties and is considered a promising crystal for Faraday isolators. In this work, we report the magneto-optical anisotropy of the TAGG crystal for the first time, which is crucial for the actual processing and usage of the crystal devices. Herein, a high-quality non-cracked TAGG single crystal is grown by the Czochralski method, and it exhibits a high transmittance of more than 80% in the wavelength range of 400–1600 nm. The magneto-optical anisotropy is determined by studying the magneto-optical properties along three different crystal orientations (100), (110), and (111). The results demonstrate that the (111) orientation exhibits superior magneto-optical performance with the largest Verdet constants of 279.4 rad T−1 m−1 at 515 nm, 154.2 rad T−1 m−1 at 650 nm, and 49.5 rad T−1 m−1 at 1064 nm, respectively.

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可见-红外法拉第隔离器Tb3Al3Ga2O12单晶磁光各向异性研究
Tb3Al3Ga2O12 (TAGG)晶体具有优异的光学和磁光性能,被认为是一种很有前途的法拉第隔离体晶体。在这项工作中,我们首次报道了TAGG晶体的磁光各向异性,这对晶体器件的实际加工和使用至关重要。本文采用Czochralski法生长出高质量的无裂纹TAGG单晶,在400 ~ 1600 nm波长范围内具有80%以上的高透射率。磁光各向异性是通过研究(100)、(110)和(111)三个不同晶体取向的磁光性质来确定的。结果表明,(111)取向具有优异的磁光性能,在515 nm处Verdet常数最大,分别为279.4 rad T−1 m−1,650 nm处154.2 rad T−1 m−1,1064 nm处49.5 rad T−1 m−1。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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