Polymorphs of the n-Type Polymer P(NDI2OD-T2): A Comprehensive Description of the Impact of Processing on Crystalline Morphology and Charge Transport

IF 19 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Advanced Functional Materials Pub Date : 2025-01-27 DOI:10.1002/adfm.202422156
Chamikara Karunasena, Jonathan R. Thurston, Thomas P. Chaney, Hong Li, Chad Risko, Veaceslav Coropceanu, Michael F. Toney, Jean-Luc Bredas
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Abstract

A systematic study of the polymorphs emerging in P(NDI2OD-T2) (also commercially known as N2200), a prototypical organic semiconducting n-type polymer, is presented. Using a tightly integrated experimental and computational approach, detailed atomistic-level descriptions are provided investigating the three known P(NDI2OD-T2) polymorphs observed at room temperature as a function of thin-film processing. Importantly, over the course of the work, a missing link is uncovered, a fourth polymorph referred to here as Form I-𝜷; this new form is a morphological intermediary observed upon thermal annealing, which evolves from Form I but tends to disappear upon full polymer chain melting. The computationally derived polymorph structures show excellent agreement with experimental X-ray scattering characterization. The relative stabilities of each polymorph are calculated in terms of both the bulk material and the polymorph-air interface. An energy landscape is then constructed to qualitatively compare the thermodynamic versus kinetic origins of each polymorph, and the factors driving (supra)assembly and associated transformations among polymorphs using an approach generalizable to other organic semiconducting polymers. Lastly, the relationships among preferential polymorphic crystallinity, relative chain orientations, and directional charge transport properties in P(NDI2OD-T2) are explored. Overall, this work provides unprecedented insights into complex structure-processing-transport relationships in a representative semiconducting organic polymer.

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n型聚合物P(NDI2OD-T2)的多晶:加工对晶体形态和电荷输运影响的综合描述
本文系统地研究了典型的有机半导体n型聚合物P(NDI2OD-T2)(也称为N2200)中出现的多晶态。使用紧密结合的实验和计算方法,提供了详细的原子水平描述,研究了在室温下观察到的三种已知的P(NDI2OD-T2)多晶作为薄膜加工的函数。重要的是,在工作过程中,一个缺失的环节被发现,第四个多晶型在这里被称为形式I-𝜷;这种新形态是在热退火过程中观察到的一种形态中介,它从形态I演变而来,但在聚合物链完全熔化时趋于消失。计算得到的多晶结构与实验x射线散射特性非常吻合。每个晶型的相对稳定性计算了两个方面的大块材料和多晶型空气界面。然后构建能量景观,定性地比较每个多晶的热力学和动力学起源,以及驱动多晶之间组装和相关转换的因素,使用可推广到其他有机半导体聚合物的方法。最后,探讨了P(NDI2OD-T2)的优先多晶结晶度、相对链取向和定向电荷输运性质之间的关系。总的来说,这项工作为具有代表性的半导体有机聚合物中复杂的结构-加工-传输关系提供了前所未有的见解。
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来源期刊
Advanced Functional Materials
Advanced Functional Materials 工程技术-材料科学:综合
CiteScore
29.50
自引率
4.20%
发文量
2086
审稿时长
2.1 months
期刊介绍: Firmly established as a top-tier materials science journal, Advanced Functional Materials reports breakthrough research in all aspects of materials science, including nanotechnology, chemistry, physics, and biology every week. Advanced Functional Materials is known for its rapid and fair peer review, quality content, and high impact, making it the first choice of the international materials science community.
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