Increased high-temperature stiffness of an epoxy-based molding compound through high-temperature storage

IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Reliability Pub Date : 2025-03-01 Epub Date: 2025-02-08 DOI:10.1016/j.microrel.2025.115605
Masaya Ukita, Keisuke Wakamoto, Ken Nakahara
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Abstract

This paper investigates the tensile mechanical properties of epoxy-based molding compound (EMC) films containing 88 % silica filler. The EMC material was molded under 175 °C at 13.8 MPa pressure for 2 min and cured at 175 °C for 5 h to form 200 μm films. The films were cut into a dog-bone shape, whose stress–strain (SS) curves were measured by quasi-static tensile test at a test temperature (Tte) of room temperature (RT), 100 °C, and 150 °C. As Tte increased, all the initial curves changed from brittle-like to ductile-like. Next, the films were subjected to storage at a temperature of 150 °C (Tst0) for 24, 168, and 500 h. With increasing storage time, the stiffness of the films at Tte = 150 °C increased, while their RT counterpart did not show significant changes. This Tte-dependent difference in mechanical property was likely caused by oxidation as revealed by Fourier transform infrared spectroscopy analysis, and consequently resulted in a difference in stress distribution between 150 °C and RT in an EMC-on-metal assembly, which was confirmed by finite element method stress simulation.
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通过高温储存增加了环氧基成型化合物的高温刚度
研究了含88%二氧化硅填料的环氧基模压复合薄膜的拉伸力学性能。将EMC材料在175℃、13.8 MPa压力下成型2 min, 175℃固化5 h,形成200 μm薄膜。将薄膜切成狗骨状,在室温(RT)、100℃和150℃的测试温度下进行准静态拉伸试验,测量其应力应变曲线(SS)。随着Tte的增大,初始曲线均由脆性向延性转变。接下来,将膜在150℃(Tst0)下储存24、168和500 h。随着储存时间的增加,膜在Tte = 150℃下的刚度增加,而在RT下膜的刚度没有明显变化。傅里叶变换红外光谱分析显示,这种与te相关的力学性能差异可能是由氧化引起的,从而导致电磁辐射金属组件在150°C和RT之间的应力分布存在差异,这一点通过有限元法应力模拟得到了证实。
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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