Ramzi Dhahri, Faouzia Tayari, Amel Haouas, Hussain J. Alathlawi, Hasan B. Albargi, Elkenany Brens Elkenany, A. M. Al-Syadi, Navdeep Sharma, Madan Lal, Kais Iben Nassar
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引用次数: 0
Abstract
This study investigates the optical, dielectric, and structural properties of novel perovskite-type ferroelectric ceramics, specifically Bi-doped (Ba0.8Sr0.2)(Ti0.85Zr0.15)O3 nanoparticles, synthesized via the solid-state method. The materials were doped with Bi at the A-site with compositions of x = 0.03 and 0.05. X-ray diffraction (XRD) analysis confirmed that all samples crystallize in a cubic structure with the space group Pm3m. Dielectric measurements revealed a decrease in permittivity with increasing frequency, with notable transitions at 180 K and 170 K for x = 0.03 and x = 0.05, respectively. These findings are indicative of potential applications in energy storage where temperature stability is critical. Raman spectroscopy at room temperature corroborated the dielectric observations, showing peak broadening and reduced intensity with increasing temperature, particularly for the x = 0.05 composition. While photoluminescence spectroscopy and quantum yield measurements were not performed, the observed optical properties at room temperature suggest potential for application in optical devices. The combination of favorable dielectric characteristics, stable performance across temperature ranges, and promising optical properties underscores the versatility and optical devices applications of these Bi-doped perovskite ceramics in energy storage systems and ferroelectric memory devices. This study highlights the significant improvements in material performance achieved through Bi doping, contributing to the advancement of materials with specialized applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.