Development of flake-rod like SrO thin films via SILAR method for efficient energy storage in supercapacitors

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-03 DOI:10.1007/s10854-025-14330-z

Rushikesh G. Bobade, Akhil P. Khedulkar, Rahul S. Ingole, Vikas B. Suryawanshi, Shoyebmohamad F. Shaikh, Revanappa C. Ambare

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Abstract

The SrO thin films electrode was successfully synthesized using the Successive Ionic Layer Adsorption and Reaction (SILAR) technique, exhibiting a well-defined cubic crystalline structure with an average crystallite size of 18 nm, as confirmed through XRD analysis. The films demonstrated a flake-rod like morphology, which provided a high surface area and facilitated efficient ion diffusion, thereby enhancing their electrochemical performance. Electrochemical measurements revealed a specific capacitance (Cs_(cv)) of 599.5 F/g at a sweep rate of 5 mV/s, coupled with outstanding cycling stability, retentive 83.4% of an initial capacitance after 6000 cycles. Additionally, the Ragone plot analysis indicated a good balance between energy density as well power density, underscoring a potential of SrO thin films electrode as a promising material for higher performance supercapacitors.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.