Aging-dependent trap deactivation behavior in MAPbI3 films under varied photon energy illumination

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-14 DOI:10.1007/s10854-025-14409-7
Asmida Herawati, Forest Shih-Sen Chien
{"title":"Aging-dependent trap deactivation behavior in MAPbI3 films under varied photon energy illumination","authors":"Asmida Herawati,&nbsp;Forest Shih-Sen Chien","doi":"10.1007/s10854-025-14409-7","DOIUrl":null,"url":null,"abstract":"<div><p>Organometal halide perovskites (OHPs) exhibit remarkable optoelectronic properties, such as wide visible absorption, high photoluminescence quantum yield, excellent solar-light-harvesting capabilities, and a low lasing threshold. Despite these advances, the best performance in perovskite typically occurs several hours to days post-fabrication, likely due to defect dynamics. The study of defect dynamics, particularly trap deactivation, is crucial for understanding and improving the stability and efficiency of OHPs. Furthermore, the effect of photon energy on these dynamics has not been fully explored. This study examined how aging impacts trap deactivation in MAPbI<sub>3</sub> films under different photon energies using photoluminescence (PL). We found that aging significantly enhanced the deactivation of two types of traps, namely T<sub>L</sub> and T<sub>H</sub>, especially within the first 10 days. T<sub>L</sub> and T<sub>H</sub> ware traps in MAPbI<sub>3</sub> that can be deactivated by low and high photon energy thresholds, respectively. PL enhanced more than doubled during this period, attributed to a small amount of oxygen penetration in vacuum conditions aiding trap deactivation. PL increased linearly with increasing aging, and trap deactivation time increased exponentially with age for both T<sub>L</sub> and T<sub>H</sub> deactivation. After 27 days, blue photon illumination resulted in reversible degradation and reactivation of the previously deactivated T<sub>L</sub> and T<sub>H</sub> traps. However, red photon illumination remained capable of deactivating the T<sub>L</sub> traps. This research highlights the interplay between light-induced trap dynamics and aging, which is crucial for optimizing MAPbI<sub>3</sub> perovskite durability and performance in optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 5","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14409-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Organometal halide perovskites (OHPs) exhibit remarkable optoelectronic properties, such as wide visible absorption, high photoluminescence quantum yield, excellent solar-light-harvesting capabilities, and a low lasing threshold. Despite these advances, the best performance in perovskite typically occurs several hours to days post-fabrication, likely due to defect dynamics. The study of defect dynamics, particularly trap deactivation, is crucial for understanding and improving the stability and efficiency of OHPs. Furthermore, the effect of photon energy on these dynamics has not been fully explored. This study examined how aging impacts trap deactivation in MAPbI3 films under different photon energies using photoluminescence (PL). We found that aging significantly enhanced the deactivation of two types of traps, namely TL and TH, especially within the first 10 days. TL and TH ware traps in MAPbI3 that can be deactivated by low and high photon energy thresholds, respectively. PL enhanced more than doubled during this period, attributed to a small amount of oxygen penetration in vacuum conditions aiding trap deactivation. PL increased linearly with increasing aging, and trap deactivation time increased exponentially with age for both TL and TH deactivation. After 27 days, blue photon illumination resulted in reversible degradation and reactivation of the previously deactivated TL and TH traps. However, red photon illumination remained capable of deactivating the TL traps. This research highlights the interplay between light-induced trap dynamics and aging, which is crucial for optimizing MAPbI3 perovskite durability and performance in optoelectronic applications.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
不同光子能量照射下MAPbI3薄膜的老化依赖性陷阱失活行为
有机金属卤化物钙钛矿(oops)具有显著的光电特性,如宽可见吸收,高光致发光量子产率,出色的太阳能光收集能力和低激光阈值。尽管有这些进步,钙钛矿的最佳性能通常发生在制造后的几个小时到几天内,可能是由于缺陷动力学。缺陷动力学的研究,特别是圈闭失活,对于理解和提高OHPs的稳定性和效率至关重要。此外,光子能量对这些动力学的影响还没有得到充分的探讨。本研究利用光致发光(PL)技术研究了不同光子能量下老化对MAPbI3薄膜陷阱失活的影响。我们发现,老化显著增强了TL和TH两种陷阱的失活,尤其是在前10天。MAPbI3中的TL和TH阱分别可以被低和高光子能量阈值所抑制。在此期间,由于在真空条件下少量的氧气渗透有助于陷阱的失活,PL增加了一倍以上。TL和TH失活的陷阱失活时间均随年龄增长呈指数增长,PL随年龄增长呈线性增长。27天后,蓝色光子照射导致先前失活的TL和TH阱可逆降解和重新激活。然而,红色光子照明仍然能够使TL陷阱失效。该研究强调了光诱导陷阱动力学与老化之间的相互作用,这对于优化MAPbI3钙钛矿在光电应用中的耐久性和性能至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
期刊最新文献
Effective role of Indium addition on electrical, structural, optical, and optoelectrical properties of sprayed deposited V2O5 thin films Structural–optical relationship of thermally evaporated CZTSe thin films using Rietveld refinement and first-principles DFT Simulation-assisted study of ion transport in low-cost laser-scribed graphene electrodes for supercapacitors Kinetic engineering of diffusion and surface-controlled charge storage in a LaCoO3/PANI hybrid supercapacitors Optimization of the key parameter V/III ratio in AlN thin film growth on patterned sapphire
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1