Impact of cerium doping on the growth, structural, optical, thermal, and dielectric properties of l-tartaric acid single crystals for advanced photonic device applications
S. Dhanasekaran, P. Sagunthala, P. Yasotha, V. Vijayalakshmi
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引用次数: 0
Abstract
This study synthesized high-quality single crystals of l-tartaric acid (LTA) and cerium (Ce)-doped LTA using the slow evaporation method at room temperature. X-ray powder diffraction (XRD) confirmed their monoclinic structure (space group P21), with crystal sizes of 57 nm for LTA and 49 and 48 nm for Ce-doped LTA, calculated using Scherrer’s equation. Energy-dispersive X-ray (EDAX) analysis validated elemental composition, and Fourier transform infrared (FTIR) spectroscopy identified functional groups. Optical transmittance spectra revealed broad transparency, allowing calculation of band gaps (5.06 eV for LTA and 4.85, 4.98 eV for 0.2 M%, 1 M% of Ce-doped LTA crystals), suitable for nonlinear optical (NLO) applications. Photoluminescence (PL) spectra indicated high crystalline quality for grown crystals. Dielectric properties were measured over a wide frequency range (50 Hz to 5 MHz) and varying temperatures. Thermal stability was assessed via TG–DTA analysis. The optical and dielectric properties confirmed the multifunctional nature of the crystals. Both LTA and Ce-doped LTA crystals exhibited superior laser damage thresholds (LDT) and higher second harmonic generation (SHG) efficiencies compared to potassium dihydrogen phosphate (KDP). Third-order NLO susceptibility, measured using the Z-scan technique, further demonstrated their potential. In conclusion, LTA and Ce-doped LTA crystals exhibit excellent properties for advanced NLO and electro-optic devices, offering significant potential for a range of photonic applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.