Impact of cerium doping on the growth, structural, optical, thermal, and dielectric properties of l-tartaric acid single crystals for advanced photonic device applications

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-15 DOI:10.1007/s10854-025-14396-9
S. Dhanasekaran, P. Sagunthala, P. Yasotha, V. Vijayalakshmi
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Abstract

This study synthesized high-quality single crystals of l-tartaric acid (LTA) and cerium (Ce)-doped LTA using the slow evaporation method at room temperature. X-ray powder diffraction (XRD) confirmed their monoclinic structure (space group P21), with crystal sizes of 57 nm for LTA and 49 and 48 nm for Ce-doped LTA, calculated using Scherrer’s equation. Energy-dispersive X-ray (EDAX) analysis validated elemental composition, and Fourier transform infrared (FTIR) spectroscopy identified functional groups. Optical transmittance spectra revealed broad transparency, allowing calculation of band gaps (5.06 eV for LTA and 4.85, 4.98 eV for 0.2 M%, 1 M% of Ce-doped LTA crystals), suitable for nonlinear optical (NLO) applications. Photoluminescence (PL) spectra indicated high crystalline quality for grown crystals. Dielectric properties were measured over a wide frequency range (50 Hz to 5 MHz) and varying temperatures. Thermal stability was assessed via TG–DTA analysis. The optical and dielectric properties confirmed the multifunctional nature of the crystals. Both LTA and Ce-doped LTA crystals exhibited superior laser damage thresholds (LDT) and higher second harmonic generation (SHG) efficiencies compared to potassium dihydrogen phosphate (KDP). Third-order NLO susceptibility, measured using the Z-scan technique, further demonstrated their potential. In conclusion, LTA and Ce-doped LTA crystals exhibit excellent properties for advanced NLO and electro-optic devices, offering significant potential for a range of photonic applications.

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铈掺杂对l-酒石酸单晶生长、结构、光学、热学和介电性能的影响
本研究采用室温慢蒸发法制备了高质量的l-酒石酸(LTA)单晶和掺铈(Ce)的LTA单晶。x射线粉末衍射(XRD)证实了它们的单斜结构(空间群P21), LTA的晶体尺寸为57 nm, ce掺杂LTA的晶体尺寸为49 nm和48 nm,采用Scherrer方程计算。能量色散x射线(EDAX)分析验证了元素组成,傅里叶变换红外(FTIR)光谱鉴定了官能团。光学透射光谱显示出广泛的透明度,允许计算带隙(LTA为5.06 eV,掺ce的LTA晶体为4.85、4.98 eV),适用于非线性光学(NLO)应用。光致发光(PL)光谱表明生长的晶体具有较高的晶体质量。在较宽的频率范围(50 Hz至5 MHz)和不同的温度下测量介电性能。热稳定性通过TG-DTA分析评估。光学和介电性质证实了晶体的多功能性质。与磷酸二氢钾(KDP)相比,LTA和ce掺杂的LTA晶体均表现出更好的激光损伤阈值(LDT)和更高的二次谐波产生(SHG)效率。使用z扫描技术测量的三阶NLO敏感性进一步证明了它们的潜力。综上所述,LTA和ce掺杂LTA晶体在先进的NLO和电光器件中表现出优异的性能,为一系列光子应用提供了巨大的潜力。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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