Comprehensive exploration of a two-dimensional Cu(II)-based perovskite: a high UV–Vis–NIR absorber

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-19 DOI:10.1007/s10854-025-14385-y
Wissem Hallab, Hajir Wahbi, Rawia Msalmi, Noureddine Mhadhbi, Fatma Saadi, Fatma Aouaini, Beriham Basha, Antonio Sánchez-Coronilla, Houcine Naïli
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Abstract

A new two-dimensional lead-free halide perovskite with the structural formula (C4H14N2)[CuCl4] was synthesized and extensively characterized. The compound was analyzed using single-crystal X-ray diffraction, vibrational spectroscopy, UV−Vis−NIR diffuse reflectance spectroscopy, Ab initio simulations with VASP, and thermal analysis. X-ray diffraction studies revealed that the hybrid material crystallizes in the monoclinic phase with the centrosymmetric space group P21/c. The vibrational spectra were analyzed to identify the principal vibration modes and their assignments. Optical analysis using the Kubelka–Munk equation determined a direct allowed band gap transition with an energy level of 2.47 eV, indicating that this hybrid material is a semiconductor, consistent with theoretical calculations. Density functional theory (DFT) calculations showed that the valence band is primarily composed of Cl p-states, while the conduction band is mainly composed of Cu d-states. Thermal analysis (TGA-DTA) demonstrated that the compound is stable up to 200 °C, with gradual decomposition occurring up to 576 °C, releasing various compounds, including CH4, NO2, CO2, and Cl2, and ultimately forming copper oxide (CuO) as the final product.

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二维Cu(II)基钙钛矿的综合探索:一种高紫外-可见-近红外吸收剂
合成了一种新的二维无铅卤化物钙钛矿,其结构式为(C4H14N2)[CuCl4]。利用单晶x射线衍射、振动光谱、UV - Vis - NIR漫反射光谱、VASP从头算模拟和热分析对化合物进行了分析。x射线衍射研究表明,杂化材料在单斜晶相中结晶,具有中心对称空间群P21/c。分析了振动谱,确定了主振型及其归属。利用Kubelka-Munk方程进行光学分析,确定了直接允许带隙跃迁的能级为2.47 eV,表明该杂化材料是半导体,与理论计算一致。密度泛函理论(DFT)计算表明,价带主要由Cl - p态组成,导带主要由Cu - d态组成。热分析(TGA-DTA)表明,该化合物在200℃下稳定,在576℃下逐渐分解,释放出多种化合物,包括CH4、NO2、CO2和Cl2,最终形成氧化铜(CuO)。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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