{"title":"Dual-band electromagnetic sensing using GO-doped SnO2 nanoparticles: structural, dielectric, and resonance behavior in the C- and X-bands","authors":"Aashish Kumar, Nitika Dhingra, Manan Bhasin, Mansi Chitkara, Navneet Kaur","doi":"10.1007/s10854-025-14456-0","DOIUrl":null,"url":null,"abstract":"<div><p>In this work Sol–Gel synthesized Sn<sub>(1−<i>z</i>)</sub> GO<sub><i>z</i></sub>O<sub>2</sub>, (where <i>z</i> = 0, 0.01, and 0.02) nanoparticles were used as a SUT (Sample under test) on Flame Retardant (FR-4) substrate-based fabricated sensor and detailed characterizations of their structural, morphological, and dielectric properties have been obtained. The sensor has good resonance at two different frequencies, 4.8 and 8.4 GHz, with S<sub>11</sub> of − 22.29 and − 19.60 dB (for <i>z</i> = 0), − 24.63 and − 21.36 dB (for <i>z</i> = 0.01), and − 24.93 and − 21.95 dB (for <i>z</i> = 0.02), respectively, according to the experimental findings. The results exhibit minimal variations from the experimental findings and are in perfect alignment with the simulated mirrored sensor tuned to function at 4.85 GHz and 7.35 GHz frequencies with insertion loss less than − 20 dB. A detailed understanding of the interactions between crystallite size, frequency, dielectric constant, and reflection coefficients can be achieved through the comprehensive analysis of the Sample Under Test (SUT). Through simulation, and VNA measurements its performance has been verified, showing promise for a variety of applications in the C-, and X- bands. The design and optimization of sophisticated electromagnetic materials, where exact control over dielectric and reflection characteristics is critical, would greatly benefit from these findings.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14456-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work Sol–Gel synthesized Sn(1−z) GOzO2, (where z = 0, 0.01, and 0.02) nanoparticles were used as a SUT (Sample under test) on Flame Retardant (FR-4) substrate-based fabricated sensor and detailed characterizations of their structural, morphological, and dielectric properties have been obtained. The sensor has good resonance at two different frequencies, 4.8 and 8.4 GHz, with S11 of − 22.29 and − 19.60 dB (for z = 0), − 24.63 and − 21.36 dB (for z = 0.01), and − 24.93 and − 21.95 dB (for z = 0.02), respectively, according to the experimental findings. The results exhibit minimal variations from the experimental findings and are in perfect alignment with the simulated mirrored sensor tuned to function at 4.85 GHz and 7.35 GHz frequencies with insertion loss less than − 20 dB. A detailed understanding of the interactions between crystallite size, frequency, dielectric constant, and reflection coefficients can be achieved through the comprehensive analysis of the Sample Under Test (SUT). Through simulation, and VNA measurements its performance has been verified, showing promise for a variety of applications in the C-, and X- bands. The design and optimization of sophisticated electromagnetic materials, where exact control over dielectric and reflection characteristics is critical, would greatly benefit from these findings.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.