Dual-band electromagnetic sensing using GO-doped SnO2 nanoparticles: structural, dielectric, and resonance behavior in the C- and X-bands

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-22 DOI:10.1007/s10854-025-14456-0
Aashish Kumar, Nitika Dhingra, Manan Bhasin, Mansi Chitkara, Navneet Kaur
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Abstract

In this work Sol–Gel synthesized Sn(1−z) GOzO2, (where z = 0, 0.01, and 0.02) nanoparticles were used as a SUT (Sample under test) on Flame Retardant (FR-4) substrate-based fabricated sensor and detailed characterizations of their structural, morphological, and dielectric properties have been obtained. The sensor has good resonance at two different frequencies, 4.8 and 8.4 GHz, with S11 of − 22.29 and − 19.60 dB (for z = 0), − 24.63 and − 21.36 dB (for z = 0.01), and − 24.93 and − 21.95 dB (for z = 0.02), respectively, according to the experimental findings. The results exhibit minimal variations from the experimental findings and are in perfect alignment with the simulated mirrored sensor tuned to function at 4.85 GHz and 7.35 GHz frequencies with insertion loss less than − 20 dB. A detailed understanding of the interactions between crystallite size, frequency, dielectric constant, and reflection coefficients can be achieved through the comprehensive analysis of the Sample Under Test (SUT). Through simulation, and VNA measurements its performance has been verified, showing promise for a variety of applications in the C-, and X- bands. The design and optimization of sophisticated electromagnetic materials, where exact control over dielectric and reflection characteristics is critical, would greatly benefit from these findings.

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氧化石墨烯掺杂SnO2纳米粒子的双频电磁传感:C和x波段的结构、介电和共振行为
在这项工作中,溶胶-凝胶合成了Sn(1−z) GOzO2(其中z = 0, 0.01和0.02)纳米粒子作为SUT(被测样品)用于阻燃(FR-4)衬底的预制传感器上,并获得了其结构,形态和介电性能的详细表征。实验结果表明,该传感器在4.8 GHz和8.4 GHz两个不同频率下具有良好的谐振特性,S11分别为- 22.29和- 19.60 dB(当z = 0时),- 24.63和- 21.36 dB(当z = 0.01时),- 24.93和- 21.95 dB(当z = 0.02时)。结果显示与实验结果的差异很小,并且与模拟的镜像传感器完全一致,调谐到4.85 GHz和7.35 GHz频率,插入损耗小于- 20 dB。通过对被测样品(Sample Under Test, SUT)的综合分析,可以详细了解晶体尺寸、频率、介电常数和反射系数之间的相互作用。通过仿真和VNA测量,验证了其性能,显示了在C波段和X波段的各种应用前景。复杂电磁材料的设计和优化,对介电和反射特性的精确控制是至关重要的,将极大地受益于这些发现。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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