Crystal growth and characterization of magnesium sulfate-doped adipic acid crystals: intense NLO response from centrosymmetric crystal

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-22 DOI:10.1007/s10854-025-14455-1
S. Anbu Chudar Azhagan, V. Marianandhakumar
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Abstract

Optically good transparent quality of magnesium sulfate-doped adipic acid crystals was successfully grown by slow solvent evaporation route in methanol solvent at ambient temperature. The harvested crystal was crystallized in monoclinic crystal system with centrosymmetric space group P21/n. The measured size of the harvested crystal after a growth span of 14 days is 8 × 8 × 6 mm3. The determined second harmonic generation SHG efficiency of magnesium sulfate-doped adipic acid crystal is 2.63 times superior to that of pure adipic acid crystal. The high-resolution X-ray diffraction HRXRD experiment reveals that crystalline perfection of the grown crystal is optically good quality and consists of single diffraction peak. The obtained full width half maximum value (FWHM) of HRXRD diffraction curve is 40.07 arc second. The UV optical transmittance spectrum showed the band gap energy of 5.44 eV. FTIR and EDAX spectrum studies confirm the inclusion of dopant magnesium element into pure adipic acid host crystal matrix. The surface morphology of the grown crystal is platelet-like shape and confirms that the crystals have good crystalline nature. The grown crystal is thermally stable up to 107.3 °C. It is observed that magnesium sulfate-doped adipic acid crystal is softer than pure adipic acid sample.

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硫酸镁掺杂己二酸晶体的生长和表征:中心对称晶体的强烈NLO响应
在常温下,采用甲醇溶剂缓慢蒸发法制备了光学透明性能良好的硫酸镁掺杂己二酸晶体。所得晶体在中心对称空间群P21/n的单斜晶系中结晶。经过14天的生长,收获的晶体尺寸为8 × 8 × 6 mm3。测定了硫酸镁掺杂己二酸晶体的二次谐波产生SHG效率是纯己二酸晶体的2.63倍。高分辨率x射线衍射HRXRD实验表明,生长的晶体具有良好的光学质量,由单衍射峰组成。所得HRXRD衍射曲线全宽半最大值(FWHM)为40.07弧秒。紫外透射光谱显示带隙能量为5.44 eV。FTIR和EDAX光谱研究证实了纯己二酸基质中掺杂了镁元素。生长晶体的表面形貌呈血小板状,证实晶体具有良好的结晶性。生长的晶体在107.3℃时热稳定。观察到硫酸镁掺杂的己二酸晶体比纯己二酸样品更柔软。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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