Madhulika Bhardwaj, Dhirendra Gupta, Jyoti Shrivastava, R. K. Pandey
{"title":"Structural, optical and morphological properties of Mn:Cu co-doped ZnS films","authors":"Madhulika Bhardwaj, Dhirendra Gupta, Jyoti Shrivastava, R. K. Pandey","doi":"10.1007/s10854-025-14420-y","DOIUrl":null,"url":null,"abstract":"<div><p>Stoichiometric films of zinc sulfide (ZnS) were grown on quartz substrate using a wet chemical technique, both without and in the presence of copper (Cu) and manganese (Mn) dopants. The structural, morphological and luminescence properties of the as-deposited films were investigated using X-ray diffraction, atomic force microscopy, optical and luminescence spectroscopy. The sample compositions were analyzed using atomic absorption spectroscopy. It was found that changes in stoichiometry had a negligible effect on the crystalline phase and optical properties of the films, whereas variations in dopant concentration significantly altered their surface morphology and luminescence properties. The absorption edge of ZnS, determined using absorption spectroscopy was found to be blue-shifted from its bulk counterpart due to the confinement effect. The photoluminescence (PL) properties of the undoped and Mn:Cu co-doped ZnS samples have been studied in detail. The PL spectra of undoped samples consisted of a broad asymmetric peak which, upon deconvolution, was correlated with band edge transition and radiative recombination via intrinsic defect states. In contrast, doped samples showed intense Gaussian peaks positioned differently from the undoped samples, indicating the substitution of dopants at the zinc site in the ZnS lattice. The peak intensity also varied with changes in doping percentages in the samples. In this study, a high luminescence yield was achieved even at very low dopant concentrations.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14420-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Stoichiometric films of zinc sulfide (ZnS) were grown on quartz substrate using a wet chemical technique, both without and in the presence of copper (Cu) and manganese (Mn) dopants. The structural, morphological and luminescence properties of the as-deposited films were investigated using X-ray diffraction, atomic force microscopy, optical and luminescence spectroscopy. The sample compositions were analyzed using atomic absorption spectroscopy. It was found that changes in stoichiometry had a negligible effect on the crystalline phase and optical properties of the films, whereas variations in dopant concentration significantly altered their surface morphology and luminescence properties. The absorption edge of ZnS, determined using absorption spectroscopy was found to be blue-shifted from its bulk counterpart due to the confinement effect. The photoluminescence (PL) properties of the undoped and Mn:Cu co-doped ZnS samples have been studied in detail. The PL spectra of undoped samples consisted of a broad asymmetric peak which, upon deconvolution, was correlated with band edge transition and radiative recombination via intrinsic defect states. In contrast, doped samples showed intense Gaussian peaks positioned differently from the undoped samples, indicating the substitution of dopants at the zinc site in the ZnS lattice. The peak intensity also varied with changes in doping percentages in the samples. In this study, a high luminescence yield was achieved even at very low dopant concentrations.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.