Structural, optical and morphological properties of Mn:Cu co-doped ZnS films

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-23 DOI:10.1007/s10854-025-14420-y
Madhulika Bhardwaj, Dhirendra Gupta, Jyoti Shrivastava, R. K. Pandey
{"title":"Structural, optical and morphological properties of Mn:Cu co-doped ZnS films","authors":"Madhulika Bhardwaj,&nbsp;Dhirendra Gupta,&nbsp;Jyoti Shrivastava,&nbsp;R. K. Pandey","doi":"10.1007/s10854-025-14420-y","DOIUrl":null,"url":null,"abstract":"<div><p>Stoichiometric films of zinc sulfide (ZnS) were grown on quartz substrate using a wet chemical technique, both without and in the presence of copper (Cu) and manganese (Mn) dopants. The structural, morphological and luminescence properties of the as-deposited films were investigated using X-ray diffraction, atomic force microscopy, optical and luminescence spectroscopy. The sample compositions were analyzed using atomic absorption spectroscopy. It was found that changes in stoichiometry had a negligible effect on the crystalline phase and optical properties of the films, whereas variations in dopant concentration significantly altered their surface morphology and luminescence properties. The absorption edge of ZnS, determined using absorption spectroscopy was found to be blue-shifted from its bulk counterpart due to the confinement effect. The photoluminescence (PL) properties of the undoped and Mn:Cu co-doped ZnS samples have been studied in detail. The PL spectra of undoped samples consisted of a broad asymmetric peak which, upon deconvolution, was correlated with band edge transition and radiative recombination via intrinsic defect states. In contrast, doped samples showed intense Gaussian peaks positioned differently from the undoped samples, indicating the substitution of dopants at the zinc site in the ZnS lattice. The peak intensity also varied with changes in doping percentages in the samples. In this study, a high luminescence yield was achieved even at very low dopant concentrations.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14420-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Stoichiometric films of zinc sulfide (ZnS) were grown on quartz substrate using a wet chemical technique, both without and in the presence of copper (Cu) and manganese (Mn) dopants. The structural, morphological and luminescence properties of the as-deposited films were investigated using X-ray diffraction, atomic force microscopy, optical and luminescence spectroscopy. The sample compositions were analyzed using atomic absorption spectroscopy. It was found that changes in stoichiometry had a negligible effect on the crystalline phase and optical properties of the films, whereas variations in dopant concentration significantly altered their surface morphology and luminescence properties. The absorption edge of ZnS, determined using absorption spectroscopy was found to be blue-shifted from its bulk counterpart due to the confinement effect. The photoluminescence (PL) properties of the undoped and Mn:Cu co-doped ZnS samples have been studied in detail. The PL spectra of undoped samples consisted of a broad asymmetric peak which, upon deconvolution, was correlated with band edge transition and radiative recombination via intrinsic defect states. In contrast, doped samples showed intense Gaussian peaks positioned differently from the undoped samples, indicating the substitution of dopants at the zinc site in the ZnS lattice. The peak intensity also varied with changes in doping percentages in the samples. In this study, a high luminescence yield was achieved even at very low dopant concentrations.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
期刊最新文献
Development of flake-rod like SrO thin films via SILAR method for efficient energy storage in supercapacitors Impact of rare-earth ions (Ce, La, Sm) doping on the lattice structure and magnetic characteristics of barium cobalt nano-ferrite Improvment of electrocaloric energy storage properties in eco-friendly 0.63Na0.5Bi0.5TiO3-0.37SrTiO3-NaNbO3 ceramic synthesized by sol–gel route Silicon-based narrowband photodetectors with blade-coated perovskite light extinction layer for high performance visible-blind NIR detection Tuning resistive switching in ZnO and TiO2 nanostructures with cobalt doping
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1