Structural, optical and morphological properties of Mn:Cu co-doped ZnS films

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-23 DOI:10.1007/s10854-025-14420-y
Madhulika Bhardwaj, Dhirendra Gupta, Jyoti Shrivastava, R. K. Pandey
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Abstract

Stoichiometric films of zinc sulfide (ZnS) were grown on quartz substrate using a wet chemical technique, both without and in the presence of copper (Cu) and manganese (Mn) dopants. The structural, morphological and luminescence properties of the as-deposited films were investigated using X-ray diffraction, atomic force microscopy, optical and luminescence spectroscopy. The sample compositions were analyzed using atomic absorption spectroscopy. It was found that changes in stoichiometry had a negligible effect on the crystalline phase and optical properties of the films, whereas variations in dopant concentration significantly altered their surface morphology and luminescence properties. The absorption edge of ZnS, determined using absorption spectroscopy was found to be blue-shifted from its bulk counterpart due to the confinement effect. The photoluminescence (PL) properties of the undoped and Mn:Cu co-doped ZnS samples have been studied in detail. The PL spectra of undoped samples consisted of a broad asymmetric peak which, upon deconvolution, was correlated with band edge transition and radiative recombination via intrinsic defect states. In contrast, doped samples showed intense Gaussian peaks positioned differently from the undoped samples, indicating the substitution of dopants at the zinc site in the ZnS lattice. The peak intensity also varied with changes in doping percentages in the samples. In this study, a high luminescence yield was achieved even at very low dopant concentrations.

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Mn:Cu共掺杂ZnS薄膜的结构、光学和形态特性
采用湿法化学技术在石英衬底上生长了硫化锌(ZnS)的化学计量膜,其中既有铜(Cu)掺杂剂,也有锰(Mn)掺杂剂。利用x射线衍射、原子力显微镜、光学光谱和发光光谱研究了沉积膜的结构、形态和发光性能。采用原子吸收光谱法对样品成分进行分析。研究发现,化学计量的变化对薄膜的晶相和光学性能的影响可以忽略不计,而掺杂浓度的变化则显著改变了薄膜的表面形貌和发光性能。利用吸收光谱法测定了ZnS的吸收边,发现由于约束效应,ZnS的吸收边发生了蓝移。详细研究了未掺杂和Mn:Cu共掺杂ZnS样品的光致发光性能。未掺杂样品的PL光谱由一个宽的不对称峰组成,反褶积后,该峰与带边跃迁和通过本征缺陷态的辐射复合相关。相比之下,掺杂样品显示出与未掺杂样品不同位置的强高斯峰,表明掺杂物取代了ZnS晶格中的锌位。峰强度也随样品中掺杂百分比的变化而变化。在本研究中,即使在很低的掺杂浓度下,也能获得很高的发光率。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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