Synthesis and properties of carbon black (CB)-added polyacrylonitrile (PAN)/nickel foam (NF) flexible electrodes by electrospinning, and their supercapacitive performance

IF 3.2 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-24 DOI:10.1007/s10854-025-14403-z
M. Arslan Çarpan, S. R. Tokgöz, S. Düzyer Gebizli, A. Peksöz
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Abstract

This research study presents the successful preparation of polyacrylonitrile/nickel foam (PAN/NF) and carbon black (CB)-added polyacrylonitrile/nickel foam (CB:PAN/NF) electrodes using an electrospinning method, along with a comprehensive discussion of their remarkable supercapacitive performances. Scanning electron microscope (SEM) investigations demonstrate a robust adhesion between polyacrylonitrile fibers and nickel foam, attributable to the application of an annealing process. Energy dispersive X-ray spectrometry (EDS) studies validate the elemental composition of the electrodes. To further characterize the structural properties, additional analyses are conducted utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and Raman spectroscopy. Structural characterizations indicate that both the incorporation of carbon black and the carbonization process yield beneficial contributions to the overall material properties. Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) are employed to evaluate the thermal stability of the electrodes. Electrochemical investigations are performed using various techniques such as cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), electrochemical impedance spectroscopy (EIS), and Mott-Schottky (MS), all in a 1 M aqueous KOH solution. The addition of carbon black (CB) significantly improves the performance of the PAN/NF electrode, increasing the specific capacitance from 76.5 to 226.9 F g−1. This study also examines the reaction kinetics that characterize the energy storage mechanisms of the electrodes. The enhancement of the electroactive surface area in PAN/NF due to CB loading is also confirmed by EIS analysis. In the existing literature, many studies focus on the direct use of PAN and its derivatives as electrode materials. However, this study is the first to investigate the energy storage capabilities of PAN in combination with a current collector, specifically nickel foam (NF). The results of this study provide strong evidence for CB:PAN/NF as a promising electrode material in flexible supercapacitors.

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静电纺丝法合成炭黑加聚丙烯腈/泡沫镍柔性电极及其超电容性能
本研究介绍了用静电纺丝法成功制备聚丙烯腈/泡沫镍(PAN/NF)和添加炭黑(CB)的聚丙烯腈/泡沫镍(CB:PAN/NF)电极,并对其优异的超电容性能进行了全面讨论。扫描电子显微镜(SEM)研究表明,聚丙烯腈纤维和泡沫镍之间有很强的附着力,这是由于退火工艺的应用。能量色散x射线光谱(EDS)研究证实了电极的元素组成。为了进一步表征结构性质,利用x射线衍射(XRD)、x射线光电子能谱(XPS)、傅里叶变换红外光谱(FTIR)和拉曼光谱进行了额外的分析。结构表征表明,炭黑的掺入和炭化工艺对材料的整体性能都有有益的贡献。采用热重分析(TGA)和差热分析(DTA)对电极的热稳定性进行了评价。电化学研究使用各种技术进行,如循环伏安法(CV)、恒流充放电法(GCD)、电化学阻抗谱法(EIS)和莫特-肖特基(MS),所有这些技术都在1m的KOH水溶液中进行。炭黑(CB)的加入显著改善了PAN/NF电极的性能,将比电容从76.5提高到226.9 F g−1。本研究还考察了表征电极储能机制的反应动力学。环评分析也证实了炭黑负载增加了PAN/NF的电活性表面积。在现有文献中,许多研究都集中在将PAN及其衍生物直接用作电极材料上。然而,这项研究是第一次研究PAN与集流器(特别是泡沫镍)结合的储能能力。本研究结果为CB:PAN/NF作为柔性超级电容器极材提供了强有力的证据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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