Microelectronic properties of VOPcPhO–\({\hbox {TiO}}_{2}\) organic/inorganic hybrid nanocomposite-based Schottky barrier diode

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-24 DOI:10.1007/s10854-025-14445-3
Asad Ullah Khan, Namra Hadi, Fida Muhammad, Sapna Rahman, Moamen S. Refat, Abdel Majid A. Adam, Amnah Mohammed Alsuhaibani, Q. Mohsen, Fazal Ahmad Khalid, Muhammad Tahir
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Abstract

This paper explores the potential application of titanium dioxide (\({\hbox {TiO}}_{2}\)) nanoparticles (NPs) to enhance the performance of Schottky barrier diode (SBD) made from vanadyl 2, 9, 16, 23-tetraphenoxy-29H, 31H-Phthalocyanine (VOPcPhO), a small-molecule organic semiconductor. The SBD is fabricated using a facile spin coating technique at ambient conditions by casting a 1:1 vol% blended suspension of VOPcPhO and \({\hbox {TiO}}_{2}\) NPs in chloroform on pre-deposited Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) on an indium tin oxide (ITO) substrate. To analyze the electronic properties of the fabricated device, current–voltage (\(I{-}V\)) measurements are performed at 25 \(^{\circ}\)C in dark conditions. The \(I{-}V\) characteristics of SBD displayed asymmetrical behavior with rectification ratio (RR) of 261 at ± 2.1 V for ITO/PEDOT:PSS/VOPcPhO–\({\hbox {TiO}}_{2}\)/Ag device which indicates the formation of a depletion region. Key electronic parameters such as charge carrier mobility (\(\mu\)), barrier height (\(\phi _{\text {b}}\)), series resistance (\({R}_{\text {s}}\)), and ideality factor (n) are derived from the \(I{-}V\) curves. Norde’s and Cheung’s methods are also used to verify the consistency of these parameters. Significant improvements in the values of \({R}_{\text {s}}\), n and RR are observed in ITO/PEDOT:PSS/VOPcPhO–\({\hbox {TiO}}_{2}\)/Ag device compared to many other Schottky barrier diodes (SBDs). This enhancement is attributed to the incorporation of \({\hbox {TiO}}_{2}\) nanoparticles which provide high surface-to-volume ratio. Additionally, the conduction mechanism in the fabricated device is analyzed by focusing on Poole–Frenkel and Richardson Schottky effects. The paper also reports Ultraviolet–Visible spectroscopy (UV–Vis) to obtain optical bandgaps (1.9 and 3.4 eV), morphology such as atomic force microscopy (AFM) and scanning electron microscopy (SEM) for high-resolution surface investigation, X-ray diffraction (XRD) for the determination of material’s crystallinity and Fourier transformed infrared (FTIR) for functional group analysis of VOPcPhO–\({\hbox {TiO}}_{2}\) nanoparticles.

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VOPcPhO - \({\hbox {TiO}}_{2}\)有机/无机杂化纳米复合肖特基势垒二极管的微电子性能
本文探讨了二氧化钛(\({\hbox {TiO}}_{2}\))纳米颗粒(NPs)在提高小分子有机半导体钒基2,9,16,23 -四苯氧基- 29h, 31h -酞菁(VOPcPhO)制成的肖特基势垒二极管(SBD)性能中的潜在应用。SBD是在常温条件下通过1:1的浇铸,采用简单的自旋镀膜技术制备的% blended suspension of VOPcPhO and \({\hbox {TiO}}_{2}\) NPs in chloroform on pre-deposited Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) on an indium tin oxide (ITO) substrate. To analyze the electronic properties of the fabricated device, current–voltage (\(I{-}V\)) measurements are performed at 25 \(^{\circ}\)C in dark conditions. The \(I{-}V\) characteristics of SBD displayed asymmetrical behavior with rectification ratio (RR) of 261 at ± 2.1 V for ITO/PEDOT:PSS/VOPcPhO–\({\hbox {TiO}}_{2}\)/Ag device which indicates the formation of a depletion region. Key electronic parameters such as charge carrier mobility (\(\mu\)), barrier height (\(\phi _{\text {b}}\)), series resistance (\({R}_{\text {s}}\)), and ideality factor (n) are derived from the \(I{-}V\) curves. Norde’s and Cheung’s methods are also used to verify the consistency of these parameters. Significant improvements in the values of \({R}_{\text {s}}\), n and RR are observed in ITO/PEDOT:PSS/VOPcPhO–\({\hbox {TiO}}_{2}\)/Ag device compared to many other Schottky barrier diodes (SBDs). This enhancement is attributed to the incorporation of \({\hbox {TiO}}_{2}\) nanoparticles which provide high surface-to-volume ratio. Additionally, the conduction mechanism in the fabricated device is analyzed by focusing on Poole–Frenkel and Richardson Schottky effects. The paper also reports Ultraviolet–Visible spectroscopy (UV–Vis) to obtain optical bandgaps (1.9 and 3.4 eV), morphology such as atomic force microscopy (AFM) and scanning electron microscopy (SEM) for high-resolution surface investigation, X-ray diffraction (XRD) for the determination of material’s crystallinity and Fourier transformed infrared (FTIR) for functional group analysis of VOPcPhO–\({\hbox {TiO}}_{2}\) nanoparticles.
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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