Tailoring the properties of ZnO thin films by low energy ion beam interaction

Abstract

Thin films of Zinc Oxide (ZnO) were fabricated using RF sputtering technique on glass as well as ITO substrates. Subsequently, the films were processed by low energy ion beams to modify their properties. The implantation of 200 keV Ni⁻ beam was carried out in ZnO films with various ion fluences ranging from 5 E15 to 2 E16 ions/cm². Characterization of the as deposited and ion beam processed films employed various techniques. The FESEM imaging revealed that ZnO surfaces exhibited rupture indicative of ion incorporation. The XRD analysis highlighted distinct changes. The ZnO films showed enhanced crystallinity after ion implantation. The optical properties studied by UV–Vis Spectroscopy showed that the ion implanted ZnO films have highest transmittance of ~ 80%. As deduced from Hall measurements, the conductivity and carrier concentration in ZnO films increase with increasing the fluences, however, at highest ion fluence, these values decrease. These findings underscore the subtle impact of ion beam processes on semiconductor thin films, crucial for optimizing their performance in electronic applications.