{"title":"The role of g-C3N4 loadings in MXene for photocatalytic degradation of methylene blue","authors":"Nabilah Saafie, Suriati Sufian, Nandang Mufti, Mohamad Fakhrul Ridhwan Samsudin","doi":"10.1007/s10854-025-14395-w","DOIUrl":null,"url":null,"abstract":"<div><p>The g-C<sub>3</sub>N<sub>4</sub>/MXene heterojunction photocatalyst was effectively developed using the wet impregnation synthesis method, and its physicochemical properties were thoroughly characterised. The composites of the g-C<sub>3</sub>N<sub>4</sub>/MXene was prepared by mixing the MXene to varies amount of g-C<sub>3</sub>N<sub>4</sub> (0.1–1.2 wt.%). MXene with 0.4 wt.% g-C<sub>3</sub>N<sub>4</sub> exhibited the optimal loading on the photocatalytic degradation of methylene blue under visible light, with a degradation efficiency of > 99% within 150 min. XRD, FTIR, FESEM, SAP, and DR-UV-Vis were utilised to characterise the g-C<sub>3</sub>N<sub>4</sub>/MXene heterojunction photocatalyst as developed. It was discovered that the introduction of g-C<sub>3</sub>N<sub>4</sub> affects the oxygenated functional groups and increases photocatalytic activity by increasing the density of free carrier electrons and inhibiting electron–hole recombination. However, it was revealed that excessive concentration of g-C<sub>3</sub>N<sub>4</sub> can significantly inhibit photocatalytic activity. The FESEM-EDX analysis revealed Al element was decreased up to 70% for 0.4GM thus increase the intervals between the MXene layers with higher exposed oxygen active sites for photocatalytic degradation. Corresponds to that, 0.4GM has the highest oxygen active sites for g-C<sub>3</sub>N<sub>4</sub>/MXene heterostructure photocatalyst which was 6.1 wt.%. The findings of this study may provide an innovative approach for enhancing the photocatalytic activity of MXene for applications requiring highly effective effluent treatment.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14395-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The g-C3N4/MXene heterojunction photocatalyst was effectively developed using the wet impregnation synthesis method, and its physicochemical properties were thoroughly characterised. The composites of the g-C3N4/MXene was prepared by mixing the MXene to varies amount of g-C3N4 (0.1–1.2 wt.%). MXene with 0.4 wt.% g-C3N4 exhibited the optimal loading on the photocatalytic degradation of methylene blue under visible light, with a degradation efficiency of > 99% within 150 min. XRD, FTIR, FESEM, SAP, and DR-UV-Vis were utilised to characterise the g-C3N4/MXene heterojunction photocatalyst as developed. It was discovered that the introduction of g-C3N4 affects the oxygenated functional groups and increases photocatalytic activity by increasing the density of free carrier electrons and inhibiting electron–hole recombination. However, it was revealed that excessive concentration of g-C3N4 can significantly inhibit photocatalytic activity. The FESEM-EDX analysis revealed Al element was decreased up to 70% for 0.4GM thus increase the intervals between the MXene layers with higher exposed oxygen active sites for photocatalytic degradation. Corresponds to that, 0.4GM has the highest oxygen active sites for g-C3N4/MXene heterostructure photocatalyst which was 6.1 wt.%. The findings of this study may provide an innovative approach for enhancing the photocatalytic activity of MXene for applications requiring highly effective effluent treatment.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.