The role of g-C3N4 loadings in MXene for photocatalytic degradation of methylene blue

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-26 DOI:10.1007/s10854-025-14395-w
Nabilah Saafie, Suriati Sufian, Nandang Mufti, Mohamad Fakhrul Ridhwan Samsudin
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Abstract

The g-C3N4/MXene heterojunction photocatalyst was effectively developed using the wet impregnation synthesis method, and its physicochemical properties were thoroughly characterised. The composites of the g-C3N4/MXene was prepared by mixing the MXene to varies amount of g-C3N4 (0.1–1.2 wt.%). MXene with 0.4 wt.% g-C3N4 exhibited the optimal loading on the photocatalytic degradation of methylene blue under visible light, with a degradation efficiency of > 99% within 150 min. XRD, FTIR, FESEM, SAP, and DR-UV-Vis were utilised to characterise the g-C3N4/MXene heterojunction photocatalyst as developed. It was discovered that the introduction of g-C3N4 affects the oxygenated functional groups and increases photocatalytic activity by increasing the density of free carrier electrons and inhibiting electron–hole recombination. However, it was revealed that excessive concentration of g-C3N4 can significantly inhibit photocatalytic activity. The FESEM-EDX analysis revealed Al element was decreased up to 70% for 0.4GM thus increase the intervals between the MXene layers with higher exposed oxygen active sites for photocatalytic degradation. Corresponds to that, 0.4GM has the highest oxygen active sites for g-C3N4/MXene heterostructure photocatalyst which was 6.1 wt.%. The findings of this study may provide an innovative approach for enhancing the photocatalytic activity of MXene for applications requiring highly effective effluent treatment.

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g-C3N4在MXene光催化降解亚甲基蓝中的作用
采用湿浸渍法制备了g-C3N4/MXene异质结光催化剂,并对其理化性质进行了全面表征。将MXene与g-C3N4 (0.1 ~ 1.2 wt.%)混合,制备了g-C3N4/MXene复合材料。含0.4 wt.% g-C3N4的MXene在可见光下光催化降解亚甲基蓝的效果最佳,在150 min内降解效率可达99%。利用XRD、FTIR、FESEM、SAP和DR-UV-Vis对所制备的g-C3N4/MXene异质结光催化剂进行了表征。发现g-C3N4的引入通过增加自由载流子电子密度和抑制电子-空穴复合来影响氧化官能团,提高光催化活性。然而,g-C3N4浓度过高会显著抑制其光催化活性。FESEM-EDX分析显示,0.4GM时Al元素减少高达70%,从而增加了具有较高暴露氧活性位点的MXene层之间的间隔,用于光催化降解。与此相对应,0.4GM的g-C3N4/MXene异质结构光催化剂氧活性位点最高,为6.1 wt.%。本研究结果可能为提高MXene的光催化活性提供一种创新方法,用于需要高效废水处理的应用。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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