Significantly improved energy storage characteristics of Bi0.5Na0.5TiO3-BaTiO3-based lead-free relaxation ferroelectric ceramics

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-28 DOI:10.1007/s10854-025-14467-x
Minghui Sun, Li Wang, Ruiling Jia, Yang Fu, Shengnan Yao
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引用次数: 0

Abstract

Dielectric ceramic capacitors have received a great deal of attention. In this work, (1-x)[0.92Bi0.5Na0.5TiO3-0.08(0.5Ca0.3Ba0.7TiO3-0.5BaTi0.8Zr0.2O3)]-xNaNbO3 ceramics were prepared. The breakdown electric field of the ceramics is significantly enhanced, thanks to the rational two-phase (P4bm and R3c) coexistence structure and introduction of NaNbO3. As a result, a recoverable energy storage density (Wr) of 3.7 J/cm3 and an efficiency (η) of 84.8% are achieved in 0.88[0.92Bi0.5Na0.5TiO3-0.08(0.5Ca0.3Ba0.7TiO3-0.5BaTi0.8Zr0.2O3)]-0.12NaNbO3 sample. In addition, at 160 °C, the sample has 2.8 J/cm3 of Wr and 92.1% of η at 240 kV/cm. Besides, the sample has excellent power density and rapid charge/discharge capability.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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