Facile one-step synthesis of cellular S-scheme N–ZnO/g-C3N4 toward boosted visible-light-driven CO2 reduction and norfloxacin degradation

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-01 DOI:10.1007/s10854-025-14433-7
Wei Liu, Wenna Hu, Jun Zhang
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引用次数: 0

Abstract

The construction of heterostructures for precise electron-transfer paths at the interface is crucial to widespread photocatalytic applications. In this context, we have implemented a simple one-step strategy to precisely transfer electrons from the conduction band of N-doped ZnO (N–ZnO) to the valence band of g-C3N4 by an S-scheme structure. The diverse structures and properties of the fabricated photocatalysts were synergistically verified using a series of characterization techniques. Notably, the direction of electron migration within this system was confirmed through X-ray photoelectron spectroscopy (XPS). The electrochemical impedance spectroscopy (EIS) demonstrated low charge transfer resistance, and photocurrent along with photoluminescence analyses showed enhanced spatial charge carriers separation capability of the heterostructures. Furthermore, the composite presented the cellular geometry and the long-term durability. These brought about the boosted photocatalytic performance for CO2 reduction and norfloxacin (NOR) degradation. Specifically, the optimized composite containing 10 wt% N–ZnO (NZG-10) achieved a NOR degradation efficiency of 98.8% within 50 min, with a remarkable rate constant of 22.28 and 7.58 times that of N–ZnO and g-C3N4, respectively. Simultaneously, the NZG-10 was 2.98 times the CO yield of g-C3N4. This work offers valuable insights into developing methodologies to address the low light-harvesting capability of g-C3N4 and designing other novel structural materials with desirable photocatalytic performance for widespread applications in clean energy and eco-environment management.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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