V. Mootheri, A. Minj, G. Arutchelvan, A. Leonhardt, I. Asselberghs, M. Heyns, I. Radu, D. Lin
{"title":"Contact Interface Characterization of Graphene contacted MoS2 FETs","authors":"V. Mootheri, A. Minj, G. Arutchelvan, A. Leonhardt, I. Asselberghs, M. Heyns, I. Radu, D. Lin","doi":"10.1109/IITC51362.2021.9537337","DOIUrl":null,"url":null,"abstract":"Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS2, which show a contact resistance of 9.34 kΩ – μm and 17.1 kΩ – μm, respectively. We report a novel physical characterization strategy to characterize the MoS2-contact interface by inverting the MoS2 devices, exposing the contact interface. Using Raman spectroscopy and X-ray photoelectron spectroscopy, we characterize the contact interface to correlate the observed electrical trend with physical characterization of the contact interface.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS2, which show a contact resistance of 9.34 kΩ – μm and 17.1 kΩ – μm, respectively. We report a novel physical characterization strategy to characterize the MoS2-contact interface by inverting the MoS2 devices, exposing the contact interface. Using Raman spectroscopy and X-ray photoelectron spectroscopy, we characterize the contact interface to correlate the observed electrical trend with physical characterization of the contact interface.
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