Comparison of Copper and Cobalt Surface Reactivity for Advanced Interconnects

Amine Lakhdari, M. Frégnaux, L. Caillard, A. Gonçalves, M. Thiam, F. Raynal, A. Etcheberry
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Abstract

The constant shrinking of critical dimensions in logic manufacturing is driving a change in integration of interconnects. While copper has been the material of choice for the past few decades, it is currently facing a serious challenge from other materials like cobalt. The focus of this paper is three-fold. First, we compare the reactivity of both materials in different media. Next, we confirm that kinetics of native oxide formation when exposed to atmosphere is an order of magnitude slower for copper than for cobalt and that, in the case of cobalt, the presence of an oxide is not avoidable in the industry conditions. And finally, we investigated the compatibility of plating solutions manufactured by aveni for cobalt and copper deposition. Both solutions reveal that, not only do they etch the native oxide of a cobalt seed, but they also preserve the integrity of the underlying metallic cobalt layer. This is highlighted by the fact that no oxide is detected at the interface between the deposited metal and the seed after deposition. We therefore provide evidence of the compatibility of aveni plating solution with a wide array of integrations for next generation interconnects such as copper extension with direct-on-cobalt integration or full cobalt integration.
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先进互连材料铜和钴表面反应性的比较
逻辑制造中关键尺寸的不断缩小正在推动互连集成的变化。虽然铜在过去几十年一直是首选材料,但目前它正面临着钴等其他材料的严峻挑战。本文的重点是三个方面。首先,我们比较了两种材料在不同介质中的反应性。接下来,我们确认,当暴露于大气中时,铜的天然氧化物形成动力学比钴慢一个数量级,并且在钴的情况下,氧化物的存在在工业条件下是不可避免的。最后,研究了aveni公司生产的镀液对钴和铜的相容性。这两种解决方案都表明,它们不仅可以蚀刻钴种子的天然氧化物,而且还可以保持底层金属钴层的完整性。在沉积后,在沉积金属和种子之间的界面上没有检测到氧化物,这一事实突出了这一点。因此,我们提供了证据,证明了aveni电镀溶液与下一代互连的广泛集成(如铜扩展与直接与钴集成或全钴集成)的兼容性。
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