Controlled ALE-type recess of molybdenum for future logic and memory applications

A. Pacco, Teppei Nakano, A. Iwasaki, Shota Iwahata, E. Sanchez
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引用次数: 2

Abstract

Molybdenum (Mo) is a promising metal for applications requiring low resistivity interconnects or contact lines in small dimensions. Etching of polycrystalline metals like Mo with conventional etching methods can be challenging because of the increased surface roughness and non-uniform recess. In this paper we describe a novel sequential etching method comprising two steps. The first step is an oxidation step in ozone (O3) at elevated temperatures in the range of 180°C–290°C resulting in a smooth metal/oxide interface. The second step is a selective oxide dissolution. The benefits of this cyclic, ALE-type recess over continuous wet-etching processes are improved etch-rate control and reduced surface roughness. Finally, we also demonstrated lateral recess of Mo word lines in 3D-NAND like structures resulting in uniformly recessed, straight-walled word lines.
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用于未来逻辑和存储器应用的可控ale型钼凹槽
钼(Mo)是一种很有前途的金属,用于需要低电阻率互连或小尺寸接触线的应用。由于表面粗糙度增加和凹槽不均匀,用传统的蚀刻方法蚀刻多晶金属(如Mo)是具有挑战性的。本文描述了一种新的连续刻蚀方法,该方法包括两个步骤。第一步是在180°C - 290°C的高温下在臭氧(O3)中氧化,得到光滑的金属/氧化物界面。第二步是选择性的氧化物溶解。与连续湿法蚀刻工艺相比,这种循环的ale型凹槽的好处是改善了蚀刻速率控制和降低了表面粗糙度。最后,我们还证明了在3D-NAND类结构中Mo字线的横向隐窝导致均匀凹陷的直壁字线。
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