A 1.25-GBaud CMOS transceiver with on-chip terminator and voltage mode driver for Gigabit Ethernet 1000Base-X

Gijung Ahn, D. Jeong
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引用次数: 0

Abstract

This paper presents a 1.25-GBaud transceiver chip implemented with 0.35-/spl mu/m CMOS technology, which can be used as an IEEE 802.32 Gigabit Ethernet 1000Base-X physical layer. A voltage mode driver and an on-chip termination circuit reduce signal distortion in the pseudo-ECL serial data stream in the presence of parasitic capacitance and inductance as well as reducing the number of external components. A differential voltage swing of output driver is 1400 mV and power consumption is 510 mW at 3.3 V supply under normal operation.
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一个1.25 gbaud的CMOS收发器,带有片上终止器和电压模式驱动器,用于千兆以太网1000Base-X
本文提出了一种采用0.35-/spl mu/m CMOS技术实现的1.25 gbaud收发器芯片,可作为IEEE 802.32千兆以太网1000Base-X物理层。电压模式驱动和片上终端电路减少了寄生电容和电感存在时伪ecl串行数据流中的信号失真,并减少了外部元件的数量。输出驱动器的差分电压摆幅为1400 mV,正常工作时3.3 V电源的功耗为510 mW。
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