High Performance Heterogeneous Integration on Fan-out RDL Interposer

Shuo-Mao Chen, M. Yew, F. Hsu, Y.J. Huang, Y. Lin, M.S. Liu, K.C. Lee, P. Lai, T. Lai, Shin-Puu Jen
{"title":"High Performance Heterogeneous Integration on Fan-out RDL Interposer","authors":"Shuo-Mao Chen, M. Yew, F. Hsu, Y.J. Huang, Y. Lin, M.S. Liu, K.C. Lee, P. Lai, T. Lai, Shin-Puu Jen","doi":"10.23919/VLSIT.2019.8776543","DOIUrl":null,"url":null,"abstract":"The fan-out packaging technology has recently been adopted in mobile application processors due to its advantages in form factor, fine pitch traces, and efficient thermal dissipation. This paper demonstrates heterogeneous integration on a fan-out redistribution layer (RDL) interposer. The package has a full-reticle size Si die and two HBMs. Si die and memory modules are attached to a fanout RDL and are then attached to a multilayer substrate. This advanced package meets both electrical and mechanical requirements. The fanout RDL interposer is comprised of polymer and copper traces, and it is relatively mechanically flexible. Such flexibility enhances C4 joint integrity, and allows the new package to scale up its size to meet more complex functional demands.","PeriodicalId":6752,"journal":{"name":"2019 Symposium on VLSI Technology","volume":"197 1","pages":"T52-T53"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2019.8776543","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

The fan-out packaging technology has recently been adopted in mobile application processors due to its advantages in form factor, fine pitch traces, and efficient thermal dissipation. This paper demonstrates heterogeneous integration on a fan-out redistribution layer (RDL) interposer. The package has a full-reticle size Si die and two HBMs. Si die and memory modules are attached to a fanout RDL and are then attached to a multilayer substrate. This advanced package meets both electrical and mechanical requirements. The fanout RDL interposer is comprised of polymer and copper traces, and it is relatively mechanically flexible. Such flexibility enhances C4 joint integrity, and allows the new package to scale up its size to meet more complex functional demands.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
扇出式RDL中介器的高性能异构集成
扇形封装技术由于其在外形尺寸、细间距走线和高效散热方面的优势,最近被应用于移动应用处理器中。本文演示了扇形再分布层(RDL)中介器上的异构集成。该封装有一个全光栅尺寸的Si芯片和两个hbm。硅芯片和存储模块连接到扇出RDL,然后连接到多层衬底。这种先进的封装满足电气和机械要求。扇出式RDL中间层由聚合物和铜线组成,具有相对的机械柔性。这种灵活性增强了C4关节的完整性,并允许新封装扩大其尺寸以满足更复杂的功能需求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Economics of semiconductor scaling - a cost analysis for advanced technology node Transient Negative Capacitance as Cause of Reverse Drain-induced Barrier Lowering and Negative Differential Resistance in Ferroelectric FETs Confined PCM-based Analog Synaptic Devices offering Low Resistance-drift and 1000 Programmable States for Deep Learning High Performance Heterogeneous Integration on Fan-out RDL Interposer Technology challenges and enablers to extend Cu metallization to beyond 7 nm node
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1