An approach for improving yield with intentional defects

Amy Engbrecht, R. Jarvis, A. Warrick
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引用次数: 4

Abstract

An advanced methodology was implemented using intentionally created defect arrays to enhance the understanding of defect detection tools, thus improving yield learning. Intentional Defect Array (IDA) reticles were designed at International SEMATECH to target current and future ITRS requirements. Each IDA die pattern contains separate inspection areas for metal line widths of 0.18 /spl mu/m, 0.25 /spl mu/m, and 0.35 /spl mu/m. Defect sizes at 25%, 50%, and 100% of the design feature size with known shapes and locations are placed in patterns of memory, logic, and electrical test arrays. Advanced lithographic capabilities, short-loop recipes, and dual damascene copper process flows were used to establish the IDA patterns on 200 mm wafers. The IDA wafers are being used in a variety of wafer inspection applications that require calculating capture and false count rates for defect detection. This paper describes the approach used for creating IDA wafers and the way these wafers can be applied to enhance product wafer yield.
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一种利用故意缺陷提高良率的方法
一种先进的方法被实现,使用有意创建的缺陷阵列来增强对缺陷检测工具的理解,从而提高良率学习。故意缺陷阵列(IDA)线是在国际SEMATECH上设计的,针对当前和未来的ITRS要求。每个IDA模具模式都包含单独的金属线宽度检查区域,分别为0.18 /spl mu/m, 0.25 /spl mu/m和0.35 /spl mu/m。具有已知形状和位置的设计特征尺寸的25%、50%和100%的缺陷尺寸被放置在存储器、逻辑和电气测试阵列的模式中。采用先进的光刻技术、短回路配方和双大马士革铜工艺流程,在200毫米晶圆上建立了IDA图案。IDA晶圆被用于各种晶圆检测应用,这些应用需要计算捕获率和错误计数率以进行缺陷检测。本文描述了用于制造IDA晶圆的方法,以及这些晶圆可以用于提高产品晶圆产量的方法。
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