Recent Progress and Next Directions for Embedded MRAM Technology

W. Gallagher, Eric Chien, Chiang Tien-Wei, Jian-Cheng Huang, Meng-Chun Shih, Wang Chia-Yu, C. Bair, George Lee, Y. Shih, Lee Chia-Fu, Roger Wang, K. Shen, J. J. Wu, Wayne Wang, H. Chuang
{"title":"Recent Progress and Next Directions for Embedded MRAM Technology","authors":"W. Gallagher, Eric Chien, Chiang Tien-Wei, Jian-Cheng Huang, Meng-Chun Shih, Wang Chia-Yu, C. Bair, George Lee, Y. Shih, Lee Chia-Fu, Roger Wang, K. Shen, J. J. Wu, Wayne Wang, H. Chuang","doi":"10.23919/VLSIT.2019.8776547","DOIUrl":null,"url":null,"abstract":"MRAM can play a variety of on-chip memory roles in advanced VLSI technology spanning from high retention, solder-reflow-capable non-volatile memory (NVM) to dense non-volatile or high retention working RAMs. This paper describes results for a solder-reflow-capable MRAM NVM and for extensions that trade off high retention against speed, power, and density.","PeriodicalId":6752,"journal":{"name":"2019 Symposium on VLSI Technology","volume":"24 1","pages":"T190-T191"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2019.8776547","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18

Abstract

MRAM can play a variety of on-chip memory roles in advanced VLSI technology spanning from high retention, solder-reflow-capable non-volatile memory (NVM) to dense non-volatile or high retention working RAMs. This paper describes results for a solder-reflow-capable MRAM NVM and for extensions that trade off high retention against speed, power, and density.
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嵌入式MRAM技术的最新进展及未来发展方向
MRAM可以在先进的VLSI技术中扮演各种片上存储角色,从高保留率,具有焊接回流功能的非易失性存储器(NVM)到密集非易失性或高保留率的工作ram。本文描述了具有焊接回流功能的MRAM NVM的结果,以及在速度、功率和密度方面权衡高保留的扩展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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