BF/sub 2//sup +/ implant: a fluorine bubble induced ET failure

C. Viera, B. Gurcan, K. Crocker, P. Todd, K. Lewis
{"title":"BF/sub 2//sup +/ implant: a fluorine bubble induced ET failure","authors":"C. Viera, B. Gurcan, K. Crocker, P. Todd, K. Lewis","doi":"10.1109/ASMC.2002.1001588","DOIUrl":null,"url":null,"abstract":"Fluorine bubbles are a known result of BF/sub 2//sup +/ high energy implants. This work presents a failure mechanism induced by gross fluorine bubbles, that allows poly silicon to be damaged during its subsequent cobalt silicide etch. An alternative implant that includes both BF/sub 2//sup +/ and B11 may alleviate the effects of F precipitates without eliminating the benefits of BF/sub 2//sup +/ self-amorphizing the substrate.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001588","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Fluorine bubbles are a known result of BF/sub 2//sup +/ high energy implants. This work presents a failure mechanism induced by gross fluorine bubbles, that allows poly silicon to be damaged during its subsequent cobalt silicide etch. An alternative implant that includes both BF/sub 2//sup +/ and B11 may alleviate the effects of F precipitates without eliminating the benefits of BF/sub 2//sup +/ self-amorphizing the substrate.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
BF/ sub2 /sup +/ implant:氟泡诱导ET失效
氟气泡是已知的BF/ sub2 /sup +/高能植入物的结果。这项工作提出了一种由总氟气泡引起的失效机制,使多晶硅在随后的硅化钴蚀刻过程中受到破坏。一种包括BF/sub 2//sup +/和B11的替代植入物可以减轻F沉淀的影响,而不会消除BF/sub 2//sup +/自非晶化基底的好处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
8436
期刊最新文献
A manufacturable shallow trench isolation process for sub-0.2 um DRAM technologies Ultra-dilute silicon wafer clean chemistry for fabrication of RF microwave devices Planarization yield limiters for wafer-scale 3D ICs Statistical modeling and analysis of wafer test fail counts An approach for improving yield with intentional defects
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1