Mechanical Properties of Low-k Dielectric Deposited on Subtractively Patterned Cu Lines for Advanced Interconnects

I. Ovchinnikov, D. Seregin, D. Abdullaev, K. Vorotilov, A. Rezvanov, V. Gvozdev, T. Blomberg, A. A. Veselov, M. Baklanov
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Abstract

Mechanical properties of low-k dielectrics deposited on a surface with patterned metal (Cu) lines are evaluated by using atomic force microscopy (AFM) in the PeakForce quantitative mapping (PFQNM) mode. It is shown that Young’s modulus (YM) of completely cured low-k films depends on the position in the structure. The Young’s modulus decreases with reduction of intermetal gap, and it is related to the reduced efficiency of curing. Significant reduction of YM is observed in the areas close to interface between the metal and low-k. The possible reason is bad adhesion between the low-k film and barrier layers and the reduction of effective network connectivity of silicon atoms.
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用于高级互连的低k电介质沉积在减法图案铜线上的力学性能
利用原子力显微镜(AFM)在峰力定量映射(PFQNM)模式下评价了沉积在有图案金属(Cu)线表面的低k介电体的力学性能。结果表明,完全固化低k薄膜的杨氏模量(YM)取决于其在结构中的位置。杨氏模量随金属间间隙的减小而减小,并与固化效率的降低有关。在靠近金属和低k之间界面的区域观察到YM的显著降低。可能的原因是低k膜与势垒层之间的粘附不良,硅原子的有效网络连通性降低。
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