{"title":"Commercialization of MRAM – Historical and Future Perspective","authors":"S. Ikegawa, F. Mancoff, S. Aggarwal","doi":"10.1109/IITC51362.2021.9537434","DOIUrl":null,"url":null,"abstract":"From data centers to IoT edge devices, data processing demands and evolution in computing drive the growing need for magnetoresistive random access memory (MRAM) because of its non-volatility, high speed, robust endurance, and system power savings capability. Based on a review of past successful commercialization of MRAM, this paper provides a future perspective of MRAM products. To expand the MRAM market competing with existing memories, three directions are discussed: (1) faster access time, (2) longer endurance cycles, and (3) lower bit cost.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
From data centers to IoT edge devices, data processing demands and evolution in computing drive the growing need for magnetoresistive random access memory (MRAM) because of its non-volatility, high speed, robust endurance, and system power savings capability. Based on a review of past successful commercialization of MRAM, this paper provides a future perspective of MRAM products. To expand the MRAM market competing with existing memories, three directions are discussed: (1) faster access time, (2) longer endurance cycles, and (3) lower bit cost.