B. Kim, Jong Myeong Lee, Y. Chae, S. Kang, G. Choi, Y. Park, Sang In Lee
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引用次数: 0
Abstract
The barrier properties and the reliability of Al to Si contacts using different types of TiN in the Al-PMD process are investigated. The Al-PMD process is shown to be an excellent metallization technique for high density devices such as Giga-bit DRAMs and beyond when ACVD-TiN is used as a barrier layer. ACVD-TiN has the best diffusion barrier properties due to its high density and good conformality.
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