{"title":"Scalable threshold voltage model for deep-submicrometer MOSFET","authors":"J. Kahng, J.H. Kim, M. Jo, H. Yoon","doi":"10.1109/ICVC.1999.820990","DOIUrl":null,"url":null,"abstract":"Considering effects of nonuniform doping profile in vertical and lateral directions of MOSFET and solving a quasi two-dimensional differential equation for the surface potential, we have proposed a new threshold voltage model. Our model predicts well an initial roll-up of the threshold voltage with decreasing channel lengths and reduction of it due to the reverse short-channel effects and the short-channel effects.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"93 1","pages":"518-521"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820990","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Considering effects of nonuniform doping profile in vertical and lateral directions of MOSFET and solving a quasi two-dimensional differential equation for the surface potential, we have proposed a new threshold voltage model. Our model predicts well an initial roll-up of the threshold voltage with decreasing channel lengths and reduction of it due to the reverse short-channel effects and the short-channel effects.
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