Advanced Damascene integration using selective deposition of barrier metal with Self Assemble Monolayer

H. Kawasaki, M. Iwashita, H. Warashina, H. Nagai, K. Iwai, H. Komatsu, Y. Ozaki, G. Pattanaik
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引用次数: 2

Abstract

Selective deposition of Cu diffusion barrier metal layer on dielectric with Self-Assembled Monolayer (SAM) has been demonstrated. Via resistance is expected to decrease by eliminating the barrier at via bottom in dual- and semi-damascene structure. In this study, we report the evaluation of SAMs to enable selective ALD-barrier metal deposition and, as an example, we show Cu via prefill integration using ELD-Cu with no barrier / liner at via bottom and no seam void for metal filling.
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采用选择性沉积自组装单层阻挡金属的先进大马士革集成
用自组装单层膜(SAM)在介质上选择性沉积Cu扩散势垒金属层。在双层和半大马士革结构中,通过消除通孔底部的屏障,可以减少通孔阻力。在这项研究中,我们报告了SAMs的评估,以实现选择性的ald屏障金属沉积,作为一个例子,我们展示了通过使用ld -Cu进行预填充集成的Cu,在通孔底部没有屏障/衬垫,没有金属填充的接缝空隙。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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