{"title":"XPS Diffusion analysis of Ta(N)/Ru Diffusion Barriers for Cobalt Interconnects","authors":"Bettina Wehring, L. Gerlich, B. Uhlig","doi":"10.1109/IITC51362.2021.9537391","DOIUrl":null,"url":null,"abstract":"This work examines barrier systems of metallization layers made up of novel materials for next generation computing. The diffusion of cobalt into a Ta/Ru as well as a TaN/Ru layer was analyzed by XPS depth profiles after annealing. The diffusion coefficients were estimated by applying the Mixing-Roughness-Information Depth (MRI) model to the concentration profile of cobalt and the activation energy for diffusion was calculated for both materials. Furthermore the thin films were analyzed regarding their crystal structure change upon annealing. Diffusion coefficients of D(Co in Ta/Ru) ~ 6.162e–13 exp(−139.7/RT) m2/s and D(Co in TaN/Ru) ~ 2.9948e–16 exp(−87.63/RT) m2/s were estimated.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537391","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This work examines barrier systems of metallization layers made up of novel materials for next generation computing. The diffusion of cobalt into a Ta/Ru as well as a TaN/Ru layer was analyzed by XPS depth profiles after annealing. The diffusion coefficients were estimated by applying the Mixing-Roughness-Information Depth (MRI) model to the concentration profile of cobalt and the activation energy for diffusion was calculated for both materials. Furthermore the thin films were analyzed regarding their crystal structure change upon annealing. Diffusion coefficients of D(Co in Ta/Ru) ~ 6.162e–13 exp(−139.7/RT) m2/s and D(Co in TaN/Ru) ~ 2.9948e–16 exp(−87.63/RT) m2/s were estimated.
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