Y.H. Kim, J. Nam, Y. Sohn, S. Heo, S. Lee, H.J. Park, Y. han, J. Doh, Y.J. Choi, J. Choi, J. Choi, C. Park
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引用次数: 1
Abstract
A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and V/sub TN/ respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 V/sub TN/ respectively. Also the pumping current was increased in the new circuit.
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