Advanced Process Control: benefits for photolithography process control

C. Gould
{"title":"Advanced Process Control: benefits for photolithography process control","authors":"C. Gould","doi":"10.1109/ASMC.2002.1001582","DOIUrl":null,"url":null,"abstract":"High volume, cost effective, manufacturing of state of the art lithography processes requires in depth understanding of Process and Process-Tool interaction to achieve Advanced Process Control (APC). The APC systems being deployed at Infineon Technologies, Richmond has shown and is expected to continue demonstrating continuous improvement for the following primary metrics: /spl middot/ OL and CD Cpk /spl middot/ Rework Reduction /spl middot/ Reduction of MTTD /spl middot/ Lot Cycle Time improvement.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

High volume, cost effective, manufacturing of state of the art lithography processes requires in depth understanding of Process and Process-Tool interaction to achieve Advanced Process Control (APC). The APC systems being deployed at Infineon Technologies, Richmond has shown and is expected to continue demonstrating continuous improvement for the following primary metrics: /spl middot/ OL and CD Cpk /spl middot/ Rework Reduction /spl middot/ Reduction of MTTD /spl middot/ Lot Cycle Time improvement.
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先进的工艺控制:有利于光刻工艺控制
大批量、低成本、制造最先进的光刻工艺需要深入了解工艺和工艺-工具的相互作用,以实现先进的过程控制(APC)。在里士满英飞凌技术公司部署的APC系统已经显示出并预计将继续显示出以下主要指标的持续改进:/spl中点/ OL和CD Cpk /spl中点/返工减少/spl中点/ MTTD减少/spl中点/ Lot周期时间改善。
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