Unique nondestructive inline metrology of TSVs by X-ray with model based library method

Y. Umehara, Wen Jin
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引用次数: 3

Abstract

Unique nondestructive inline profile metrology of through-Silicon via (TSV) for 3D integrated circuits in production processes such as ultra-deep etching and Cu pillar forming process was introduced. We tried to measure the depth profile of TSVs from X-ray images with a tilted angle by applying model based library method. The fairly good repeatability in critical dimensions (CDs) and the depths (<;100nm, <;200nm respectively) and good correlation in CDs with results from SEM measurement were obtained, and good robustness under low SNR ~2 of the images was confirmed.
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基于模型库的x射线无损在线测量tsv的独特方法
介绍了在超深刻蚀和铜柱成形等三维集成电路生产工艺中独特的硅通孔(TSV)无损在线轮廓测量方法。我们尝试采用基于模型的库方法从倾斜角度的x射线图像中测量tsv的深度剖面。在临界尺寸(CDs)和深度(分别< 100nm和< 200nm)上具有较好的重复性,CDs与SEM测量结果具有较好的相关性,并且在低信噪比~2下具有较好的鲁棒性。
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