IR-Drop Analysis of Hybrid Bonded 3D-ICs with Backside Power Delivery and μ- & n- TSVs

G. Sisto, B. Chehab, B. Genneret, R. Baert, R. Chen, P. Weckx, J. Ryckaert, R. Chou, G. van der Plas, E. Beyne, D. Milojevic
{"title":"IR-Drop Analysis of Hybrid Bonded 3D-ICs with Backside Power Delivery and μ- & n- TSVs","authors":"G. Sisto, B. Chehab, B. Genneret, R. Baert, R. Chen, P. Weckx, J. Ryckaert, R. Chou, G. van der Plas, E. Beyne, D. Milojevic","doi":"10.1109/IITC51362.2021.9537541","DOIUrl":null,"url":null,"abstract":"We present an IR-drop analysis of hybrid bonded 3D-ICs Power Delivery Network with backside metals and buried power rail. Two different options for the backside to frontside connectivity are included: μTSVs and nTSVs (respectively 0.5μm, 0.09μm diameter and 1Ω, 10Ω nominal resistance). Further, Hybrid Bonding CuPads are used to deliver power to the second die in the stack. A commercial power analysis tool is extended to support both the TSV and the pads structures, to tackle both inter-die and on-die power delivery challenges. A L1 cache memory implemented on the top of a core is used as test case to assess the performance of the proposed metal stack. A 69% reduction in average static IR-drop is observed with the BS-PDN compared to the conventional frontside. Further, 81% and 77% average and peak IR-drop reductions are obtained with nTSV compared to μTSV.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

We present an IR-drop analysis of hybrid bonded 3D-ICs Power Delivery Network with backside metals and buried power rail. Two different options for the backside to frontside connectivity are included: μTSVs and nTSVs (respectively 0.5μm, 0.09μm diameter and 1Ω, 10Ω nominal resistance). Further, Hybrid Bonding CuPads are used to deliver power to the second die in the stack. A commercial power analysis tool is extended to support both the TSV and the pads structures, to tackle both inter-die and on-die power delivery challenges. A L1 cache memory implemented on the top of a core is used as test case to assess the performance of the proposed metal stack. A 69% reduction in average static IR-drop is observed with the BS-PDN compared to the conventional frontside. Further, 81% and 77% average and peak IR-drop reductions are obtained with nTSV compared to μTSV.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
后向供电和μ-和n- tsv混合键合3d - ic的ir -降分析
我们提出了一种具有背面金属和地埋电源轨的混合键合3d - ic供电网络的IR-drop分析。包括两种不同的后正面连接选项:μ tsv和ntsv(分别为0.5μm, 0.09μm直径和1Ω, 10Ω标称电阻)。此外,混合键合杯用于向堆栈中的第二个芯片提供功率。商业功率分析工具扩展到支持TSV和衬垫结构,以解决模间和模内功率传输的挑战。在核心顶部实现的L1高速缓存用作测试用例,以评估所建议的金属堆栈的性能。与传统的前端相比,BS-PDN的平均静态红外下降降低了69%。此外,与μTSV相比,nTSV可使平均红外降降低81%,峰值红外降降低77%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Contact Interface Characterization of Graphene contacted MoS2 FETs Controlled ALE-type recess of molybdenum for future logic and memory applications Comparison of Copper and Cobalt Surface Reactivity for Advanced Interconnects On-die Interconnect Innovations for Future Technology Nodes Advanced CMP Process Control by Using Machine Learning Image Analysis
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1