IR-Drop Analysis of Hybrid Bonded 3D-ICs with Backside Power Delivery and μ- & n- TSVs

G. Sisto, B. Chehab, B. Genneret, R. Baert, R. Chen, P. Weckx, J. Ryckaert, R. Chou, G. van der Plas, E. Beyne, D. Milojevic
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引用次数: 10

Abstract

We present an IR-drop analysis of hybrid bonded 3D-ICs Power Delivery Network with backside metals and buried power rail. Two different options for the backside to frontside connectivity are included: μTSVs and nTSVs (respectively 0.5μm, 0.09μm diameter and 1Ω, 10Ω nominal resistance). Further, Hybrid Bonding CuPads are used to deliver power to the second die in the stack. A commercial power analysis tool is extended to support both the TSV and the pads structures, to tackle both inter-die and on-die power delivery challenges. A L1 cache memory implemented on the top of a core is used as test case to assess the performance of the proposed metal stack. A 69% reduction in average static IR-drop is observed with the BS-PDN compared to the conventional frontside. Further, 81% and 77% average and peak IR-drop reductions are obtained with nTSV compared to μTSV.
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后向供电和μ-和n- tsv混合键合3d - ic的ir -降分析
我们提出了一种具有背面金属和地埋电源轨的混合键合3d - ic供电网络的IR-drop分析。包括两种不同的后正面连接选项:μ tsv和ntsv(分别为0.5μm, 0.09μm直径和1Ω, 10Ω标称电阻)。此外,混合键合杯用于向堆栈中的第二个芯片提供功率。商业功率分析工具扩展到支持TSV和衬垫结构,以解决模间和模内功率传输的挑战。在核心顶部实现的L1高速缓存用作测试用例,以评估所建议的金属堆栈的性能。与传统的前端相比,BS-PDN的平均静态红外下降降低了69%。此外,与μTSV相比,nTSV可使平均红外降降低81%,峰值红外降降低77%。
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