J. Lim, Y.K. Kim, S. Choi, J. Lee, Y. Kim, B.T. Lee, H.S. Park, Y.W. Park, S.I. Lee
{"title":"Novel Al/sub 2/O/sub 3/ capacitor for high density DRAMs","authors":"J. Lim, Y.K. Kim, S. Choi, J. Lee, Y. Kim, B.T. Lee, H.S. Park, Y.W. Park, S.I. Lee","doi":"10.1109/ICVC.1999.820987","DOIUrl":null,"url":null,"abstract":"A poly-Si/Al/sub 2/O/sub 3//poly-Si capacitor is developed for the simple integration of 256 Mb DRAM and beyond. The oxide equivalent thickness (T/sub 0xeq/) of the Al/sub 2/O/sub 3/ capacitor was achieved as small as 28 nm, which is about 1.7 times smaller than that of advanced NO capacitor. Especially, the pre-treatment before the deposition of Al/sub 2/O/sub 3/ film plays a crucial role for stable device performance. Moreover, one of the distinguished characteristics of the Al/sub 2/O/sub 3/ capacitor is that the capacitance was even enhanced by performing the conventional DRAM processes, including the high temperature planarization method known as BPSG flow, without degrading the leakage characteristics.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"26 1","pages":"506-509"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820987","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A poly-Si/Al/sub 2/O/sub 3//poly-Si capacitor is developed for the simple integration of 256 Mb DRAM and beyond. The oxide equivalent thickness (T/sub 0xeq/) of the Al/sub 2/O/sub 3/ capacitor was achieved as small as 28 nm, which is about 1.7 times smaller than that of advanced NO capacitor. Especially, the pre-treatment before the deposition of Al/sub 2/O/sub 3/ film plays a crucial role for stable device performance. Moreover, one of the distinguished characteristics of the Al/sub 2/O/sub 3/ capacitor is that the capacitance was even enhanced by performing the conventional DRAM processes, including the high temperature planarization method known as BPSG flow, without degrading the leakage characteristics.
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